2007 International Workshop on Physics of Semiconductor Devices 2007
DOI: 10.1109/iwpsd.2007.4472466
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Low temperature behavior of strained-Si n-MOSFETs

S.S. Mahato
1
,
Debasis Mitra
2
,
Tapas K. Maiti
3
et al.

Abstract: The performance enhancement in strained-Si n-MOSFETs are evaluated as a function of temperature. Mobility modeling at low temperature is reported. SPICE parameters are extracted for strained-Si n-MOSFETs for the first time. Index Terms-Strained-Si, MOSFET

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