Low-Temperature Deposited Highly Flexible In–Zn–V–O Transparent Conductive Electrode for Perovskite Solar Cells

Abstract

Inorganic–organic hybrid perovskite solar cells (PSCs) typically embrace Sn-doped In2O3 (ITO) and F-doped SnO2 (FTO) as transparent electrodes, which are rigid and brittle, retarding the commercialization of flexible PSCs (FPSCs). Here, we fabricated flexible amorphous transparent V-doped In–Zn–O (IZVO) thin films with varied concentrations of V atoms at room temperature. The impacts of V concentration on the chemical, electrical, and optical properties of IZVO thin films were thoroughly investigated. The incorporation of V into IZO was demonstrated to suppress the formation of oxygen vacancies and thus reduce the carrier concentration in IZO. The IZVO thin film affords the best electrode performance with an optimum V concentration of 0.46 atom %. In contrast to the conventional ITO transparent electrodes that require a high processing temperature, the amorphous transparent IZVO electrode deposited at a low temperature without any heating and postannealing process showed a low sheet resistance (∼22.6 Ω/□), high conductivity (∼2210 S/cm), high optical transmittance (∼88.8%), and in particular, excellent mechanical flexibility and fatigue robustness. Therefore, the amorphous transparent IZVO electrode-based perovskite solar cells (PSCs) showed superior performance (14.57%) compared to the amorphous ITO electrode-based PSCs (11.96%), due to the significantly improved short-circuit current density (J SC), open-circuit voltage (V OC), and fill factor (FF). Moreover, the IZVO electrode-based FPSC device retained 77% of its initial power conversion efficiency (PCE) after 100 bending cycles, while the PCE of the amorphous ITO electrode-based FPSC dropped by 80% after only 30 bending cycles. Combining the excellent mechanical flexibility and fatigue robustness, the flexible amorphous IZVO electrode shows great potential for highly efficient flexible photovoltaic applications.

InZnTiON Channel Layer for Highly Stable Thin-Film Transistors and Light-Emitting Transistors

“…As the number of oxygen vacancies decreased, two electrons per oxygen vacancy decreased in the InZnTiON film. According to the conductivity equation, the carrier density can affect the mobility and conductivity of the materials. , σ = italicnq μ where σ is the conductivity, n is the carrier density, q is the electron charge, and μ is the Hall mobility. Therefore, lower carrier concentrations increased the mobility (from 0.57 to 4.52 cm 2 /V·s) and decreased the conductivity (from 4.48 × 10 –4 to 1.02 × 10 –4 S/cm).…”

Device Structures of Perovskite Solar Cells: A Critical Review

“…Therefore, IZVO transparent electrode‐based PSCs showed superior performance (14.57%) compared to the amorphous ITO electrode‐based PSCs (11.96%). [ 92 ] As ITO is brittle, it is easily breakable during bending. Due to this, TCO‐free PSC was demonstrated using lithium bis(trifluoromethane)sulfonimide (Li‐TFSI) on HTM resulting in a PCE of 19.01%.…”

Advances in Carbon Materials Applied to Carbon‐Based Perovskite Solar Cells

“…Despite the successful use of materials such as ZnO, SnO 2 , PCBM, and doped oxide, the most commonly used material in PSCs is TiO 2 because it presents good electron transport and allows the rapid injection of the perovskite charge. [ 75–77 ]…”

“…Despite the successful use of materials such as ZnO, SnO 2 , PCBM, and doped oxide, the most commonly used material in PSCs is TiO 2 because it presents good electron transport and allows the rapid injection of the perovskite charge. [75][76][77] Different methods have been used to deposit the perovskite layer, such as spin-coating (using single-or two-step deposition), thermal vapor deposition, spray-pyrolysis, vapor-assisted solution deposition, and solvent engineering assistance. [78][79][80] Spincoating is undoubtedly the most commonly used technique for small devices, such as devices commonly fabricated at the laboratory scale.…”