Low-temperature-poling awakened high dielectric breakdown strength and outstanding improvement of discharge energy density of (Pb,La)(Zr,Sn,Ti)O3 relaxor thin film

Peng, Biaolin; Tang, Silin; Li, Lü; Zhang, Qi; Huang, Haitao; Bai, Gang; Miao, Lei; Zou, B. S.; Liu, Laijun; Sun, Wenhong; Wang, Zhong Lin

doi:10.1016/j.nanoen.2020.105132

Cited by 30 publications

(14 citation statements)

References 54 publications

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“…These methods have limited effect. Therefore, Li et al proposed a method to improve the dielectric breakdown strength and control the interaction between defect dipoles and nano domains by low-temperature-poling [ 65 ].…”

Section: Design Of a Lead-free Ferroelectric Materials With High Ementioning

confidence: 99%

“…We proposed a method to improve the dielectric breakdown electric field and control the interaction between defect dipoles and nano domains by low-temperature-poling ( Figure 19 ). Through low-temperature-poling (Pb,La)(Zr,Sn,Ti)O 3 thin films, the dielectric breakdown strength from 1286 kV/cm to 2000 kV/cm and its corresponding energy storage density was also enhanced from 16.6 J/cm 3 to 31.2 J/cm 3 ( Figure 20 ) [ 65 ].…”

Section: Design Of a Lead-free Ferroelectric Materials With High Ementioning

confidence: 99%

Section: Figurementioning

confidence: 99%

Section: Figurementioning

confidence: 99%

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Energy Storage and Electrocaloric Cooling Performance of Advanced Dielectrics

et al. 2021

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Dielectric capacitors are widely used in pulse power systems, electric vehicles, aerospace, and defense technology as they are crucial for electronic components. Compact, lightweight, and diversified designs of electronic components are prerequisites for dielectric capacitors. Additionally, wide temperature stability and high energy storage density are equally important for dielectric materials. Ferroelectric materials, as special (spontaneously polarized) dielectric materials, show great potential in the field of pulse power capacitors having high dielectric breakdown strength, high polarization, low-temperature dependence and high energy storage density. The first part of this review briefly introduces dielectric materials and their energy storage performance. The second part elaborates performance characteristics of various ferroelectric materials in energy storage and refrigeration based on electrocaloric effect and briefly shed light on advantages and disadvantages of various common ferroelectric materials. Especially, we summarize the polarization effects of underlying substrates (such as GaN and Si) on the performance characteristics of ferroelectric materials. Finally, the review will be concluded with an outlook, discussing current challenges in the field of dielectric materials and prospective opportunities to assess their future progress.

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Section: Design Of a Lead-free Ferroelectric Materials With High Ementioning

confidence: 99%

Section: Design Of a Lead-free Ferroelectric Materials With High Ementioning

confidence: 99%

Section: Figurementioning

confidence: 99%

Section: Figurementioning

confidence: 99%

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Energy Storage and Electrocaloric Cooling Performance of Advanced Dielectrics

et al. 2021

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“…However, high applied electric eld may limit its application in integrated electronic circuits, as well as in wearable or implantable devices requiring low electric eld. Pb-based relaxor ferroelectric and antiferroelectric ceramics had been considered as potential candidates, while the toxic of Pb limits its application [7,8]. It is urgent to design and develop new Pb-free systems with high W rec especially under relatively low electric eld.…”

Section: Introductionmentioning

confidence: 99%

Remarkably Enhanced Dielectric Stability and Energy Storage Properties in BNT-BST Relaxor Ceramics by A-Site Defect Engineering for Pulsed Power Applications

Shen

et al. 2021

Preprint

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Lead-free bulk ceramics for advanced pulsed power capacitors show relatively low recoverable energy storage density (Wrec) especially at low electric field condition. To address this challenge, we proposed an A-site defect engineering to optimize the electric polarization behavior by disrupting the orderly arrangement of A-site ions, in which Ba0.105Na0.325Sr0.245−1.5xð0.5xBi0.325+xTiO3 (BNS0.245−1.5xð0.5xB0.325+xT, x = 0, 0.02, 0.04, 0.06, 0.08) lead-free ceramics were selected as the representative. The BNS0.245−1.5xð0.5xB0.325+xT ceramics were prepared by using pressureless solid state sintering and achieved large Wrec (1.8 J/cm3) at a low electric field (@110 kV/cm) when x = 0.06. The value of 1.8 J/cm3 is super high as compared to all other Wrec in lead-free bulk ceramics under a relatively low electric field (< 160 kV/cm). Furthermore, a high dielectric constant of 2930 ± 15% in a wide temperature range of 40 ~ 350°C was also obtained in BNS0.245−1.5xð0.5xB0.325+xT (x = 0.06) ceramics. The excellent performances can be attributed to the A-site defect engineering, which can reduce Pr and improve the thermal evolution of polar nanoregions (PNRs). This work confirms that the BNS0.245−1.5xð0.5xB0.325+xT (x = 0.06) ceramics are desirable for advanced pulsed power capacitors, and will push the development of a series of BNT-based ceramics with high Wrec and high temperature stability.

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The defect related energy-storage properties of A-site off-stoichiometry ferroelectric ceramic

Meng

Tang

et al. 2021

Appl. Phys. A

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The Ba 0.985 La 0.015 Ti 0.9 Sn 0.1 O 3 ceramic has been prepared by a cost-effective solid-state reaction method. Preliminary roomtemperature X-ray diffraction indicates that the crystallization of the ceramic is good. Field Emission Scanning Electron Microscopy was used to study the microstructure of ceramic. X-ray photoelectron spectroscopy was used to characterize the oxygen vacancies. Dielectric properties and impedance spectroscopy reflected the characteristic of relaxor-type behavior. Modified Curie-Weiss law was used to evaluate the relaxor behavior. The fitting result of the relaxation parameter λ = 1.4, which verifies their relaxor property. Jonscher's power law was used to analyze the behavior of alternating current conductivity. The Arrhenius law was used to calculate the relaxor activation-energy (E a ) and the conduction activation-energy (E c ). The fitting results show that the E a and E c are 1.1 and 1. 13 eV, respectively. These values demonstrate that the high-temperature relaxor behavior was attributed to the double ionized oxygen vacancies. The electric field versus polarization curve reflects the energy-storage property of it. The maximum recoverable energy-storage density is 2.14 J/cm 3 , and the energy-storage efficiency is 67.65%.

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Low-temperature-poling awakened high dielectric breakdown strength and outstanding improvement of discharge energy density of (Pb,La)(Zr,Sn,Ti)O3 relaxor thin film

Cited by 30 publications

References 54 publications

Energy Storage and Electrocaloric Cooling Performance of Advanced Dielectrics

Energy Storage and Electrocaloric Cooling Performance of Advanced Dielectrics

Remarkably Enhanced Dielectric Stability and Energy Storage Properties in BNT-BST Relaxor Ceramics by A-Site Defect Engineering for Pulsed Power Applications

The defect related energy-storage properties of A-site off-stoichiometry ferroelectric ceramic

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