Low temperature preparation and electric properties of highly (100)-oriented (Na0.85K0.15)0.5Bi0.5TiO3 thin films prepared by a sol–gel route

Interface Optimization and Electrical Properties of 0.5Ba(Zr0.2Ti0.8)O3–0.5(Ba0.7Ca0.3)TiO3Thin Films Prepared by a Sol–Gel Process

“…The precursor sol was synthesized using calcium acetate, barium acetate, zirconium n- propoxide, and titanium isopropoxide as the raw materials and 2-methoxyethanol as the solvent. The sol concentration of 0.5BZT–0.5BCT was adjusted to 0.35 M. The PLCT sol was also prepared using a sol–gel technique (the detailed procedure is reported in our previous study) and the concentration of the final solution was adjusted to 0.05 M. Thin PLCT layers were first deposited onto a Pt/Ti/SiO 2 /Si substrate and pyrolyzed at 450 °C for 60 s on a hot plate; the corresponding thickness of the seed layer was ∼5 nm (Figure ) . Then, 0.5BZT–0.5BCT was deposited onto the PLCT coating, and the resulting material was pyrolyzed at 450 °C for 120 s on a hot plate.…”

“…In our previous study, we reported that Pb 0.8 Ca 0.1 La 0.1 Ti 0.975 O 3 (PLCT) thin films could be crystallized at low temperatures and exhibited a high pyroelectric coefficient and a low dielectric constant . On the basis of these results, the present study aims to use PLCT as a seed layer and investigate the effect of this seed layer on crystallization behaviors, including crystal orientation of 0.5BZT–0.5BCT thin films and interfacial diffusion.…”

Properties of Na_0.5Bi_0.5TiO₃-SrTiO₃Ferroelectric Thin Films Prepared by a Modified MOSD Process

“…Preparation and properties of NBT-based thin films, of which the expected applications are focused on ferroelectric memories, capacitors and sensors, have been studied by many researchers as a result [6][7][8]. To achieve extensive potential uses of NBT-based films, many preparation methods have been used, such as sol-gel [9,10], metalorganic solution deposition method [11][12][13], high-pressure sputtering deposition [14], and pulsed laser deposition [15,16]. It can be seen that the metalorganic solution deposition (MOSD) method is more appropriate than other methods when the growth conditions of the films and economic factors are considered.…”

The dielectric studies on sol–gel routed molybdenum oxide thin film

“…The sol-gel technique has been receiving considerable attention to prepare the high quality films at low cost with simpler deposition procedure. 6 In this present work, the sol-gel routed spin coating technique has been used for obtaining MoO 3 thin films at room temperature with required thickness. Prepared films were annealed at the temperature range 250-400 C to convert MoO 3 thin film from amorphous to crystalline nature.…”