Low temperature silicon epitaxy using rapid thermal chemical vapor deposition (RTCVD) for solar cell application

Lai, Donny; Tan, Yew Heng; Ong, Duen Yang; Tan, Chuan Seng

doi:10.1109/pvsc.2010.5614420

Cited by 1 publication

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“…reveals the presence of misfit dislocation in the form of dark fringes initiated from the Ge -Si interface. These misfit dislocations, together with structural abnormities reported in our previous study [10] may contribute to material-induced shunt due to strongly recombinative crystal defects [11], thus resulting in the lower VOC value obtained from the cell with back Ge epilayer. Work is ongoing to optimize the interfacial quality of both Si and Ge epitaxial growth to enhance the VOC.…”

Section: Fig 4: Absorbance Measurements Of Blanket P-si Substrate Bmentioning

confidence: 92%

Enhanced optical absorbance of epitaxial emitter silicon solar cells with a back germanium epilayer

Lai

Tan

2011

2011 37th IEEE Photovoltaic Specialists Conference

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Direct germanium (Ge) epilayer growth on silicon (Si) solar cells offers the potential of improving the power conversion efficiency (PCE) as a result of enhancement in optical absorbance, particularly at longer wavelength. The realization of this potential depends critically on the competing effects between the short circuit current density (JSC) gain due to the improved infrared absorption and the reduction in open circuit voltage (VOC) due to smaller bandgap in the Ge layer, as well as imperfection at the Ge -Si interface. This paper investigates the feasibility of growing a thin Ge epilayer, by rapid thermal chemical vapor deposition (RTCVD), on the backside of a Si solar cell with epitaxial emitter. Experimental results of the solar cell with such configuration yield a remarkably high JSC of 35.1 mA/cm 2 , VOC of 445 mV, and a respectable PCE of 4.6% under one sun and AM 1.5G illumination with no surface texturization or antireflective coating. A high fill factor (FF) could be realized in the cell with further optimization in surface passivation, contact resistance and reduction of misfit dislocations at the Ge -Si interface.

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Section: Fig 4: Absorbance Measurements Of Blanket P-si Substrate Bmentioning

confidence: 92%

Enhanced optical absorbance of epitaxial emitter silicon solar cells with a back germanium epilayer

Lai

Tan

2011

2011 37th IEEE Photovoltaic Specialists Conference

Self Cite

View full text Add to dashboard Cite

show abstract

Low temperature silicon epitaxy using rapid thermal chemical vapor deposition (RTCVD) for solar cell application

Cited by 1 publication

References 5 publications

Enhanced optical absorbance of epitaxial emitter silicon solar cells with a back germanium epilayer

Enhanced optical absorbance of epitaxial emitter silicon solar cells with a back germanium epilayer

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