Low-temperature sintering and dielectric properties of the Bi(Nb1−x Ta x )O4 system

Abstract

Low-temperature sintering and dielectric properties of the Bi(Nb 1−x Ta x )O 4 (x=0.1, 0.3, and 0.5) system was investigated as a function of the zinc borosilicate (ZBS) glass content with a view to applying this system to LTCC technology. The addition of 7 wt% ZBS glass ensured a successful sintering below 900°C. The complete solid solution of Bi(Nb, Ta)O 4 with an orthorhombic structure was formed and the high temperature form of Bi(Nb, Ta)O 4 with a triclinic structure was not observed. The second phase of Bi 2 SiO 5 was observed for all compositions. The non-relative liquid phase sintering (NLPS) occurred and the one-stage sintering was conducted. The Q×f values were improved by the addition of Ta. Bi(Nb 0.7 Ta 0.3 )O 4 with 7 wt% ZBS glass sintered at 900°C demonstrated 35.8 in the dielectric constant (ɛ r ), 2,200 GHz in the quality factor (Q×f 0 ), and −48 ppm/°C in the temperature coefficient of resonant frequency (τ f ).