Low-temperature synthesis of graphene on nickel foil by microwave plasma chemical vapor deposition

Abstract

Microwave plasma chemical vapor deposition (MPCVD) was employed to synthesize high quality centimeter scale graphene film at low temperatures. Monolayer graphene was obtained by varying the gas mixing ratio of hydrogen and methane to 80:1. Using advantages of MPCVD, the synthesis temperature was decreased from 750 °C down to 450 °C. Optical microscopy and Raman mapping images exhibited that a large area monolayer graphene was synthesized regardless of the temperatures. Since the overall transparency of 89% and low sheet resistances ranging from 590 to 1855 Ω∕sq of graphene films were achieved at considerably low synthesis temperatures, MPCVD can be adopted in manufacturing future large-area electronic devices based on graphene film.

Controllable Synthesis of Graphene by Plasma‐Enhanced Chemical Vapor Deposition and Its Related Applications

“…High‐quality monolayer graphene can be synthesized on the surface of transition metal by optimizing the growth parameters. Kim et al41 demonstrate a low‐temperature synthesis of monolayer graphene on polycrystalline Ni foils by MW PECVD. In the work, monolayer graphene is obtained on polycrystalline Ni foils under various ratios of hydrogen and methane with growth temperature from 450 to 750 °C, as shown in Figure   4 a,b.…”

Synthesis of graphene on a Ni film by radio-frequency plasma-enhanced chemical vapor deposition

“…Raman spectroscopy is a powerful technique to characterize the crystalline quality and number of layers in a graphene sample [25]. The most notable feature for graphene is the appearance of the 2D peak, the position and shape of which are related to the formation and the layer number [15,16,[25][26][27][28].…”

“…Raman spectroscopy is a powerful technique to characterize the crystalline quality and number of layers in a graphene sample [25]. The most notable feature for graphene is the appearance of the 2D peak, the position and shape of which are related to the formation and the layer number [15,16,[25][26][27][28]. The graphene formed after deposition for 30 s exhibits a symmetric 2D peak at ~2680 cm 1 with a full width at half-maximum of about 33 cm 1 , which indicates that it is single-layer graphene [15,16,[25][26][27][28].…”

“…PECVD is probably the most promising method to produce graphene to date because it allows high-quality large-area graphene to be fabricated at low cost [14,[23][24][25]. Also, graphene grown by PECVD exhibits a high carrier mobility, low sheet resistance and high optical transparency, suggesting it is of high quality and has great potential for various applications [14,[23][24][25].…”

Synthesis of Nanostructure Carbon Films Deposited by Microwave Plasma-Enhanced Chemical Vapor Deposition Technique at Room Temperature

“…There are several plasma-based techniques for the synthesis of carbon nanostructures such as radio frequency (RF) PECVD (7), Microwave (MW) PECVD (8), ECR PECVD (6), filtered cathodic vacuum arc (FCVA) technique (9) etc. Among these techniques, MW PECVD is a versatile technique for the deposition of carbon-based nanostructures such as ultra nanocrystalline diamond (10), carbon nanotube (CNT) (11,12), carbon nanofiber (CNF) (13), and graphene (14,15). MW PECVD has certain advantages over other techniques as it produces highly ionized plasma with high deposition rate, electrode less deposition, and capable of producing plasma from the low pressure to high pressure of several Torr.…”