Low V_pp, ultralow-energy, compact, high-speed silicon electro-optic modulator

Dong, Po; Liao, Shirong; Feng, Dazeng; Liang, Hong; Zheng, Dawei; Shafiiha, Roshanak; Kung, Cheng-Chih; Qian, Wei; Li, Guoliang; Zheng, Xuezhe; Krishnamoorthy, Ashok V.; Asghari, Mehdi

doi:10.1364/oe.17.022484

Cited by 428 publications

(240 citation statements)

References 16 publications

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“…This has fueled significant research and development work in this area in the past few years. [1][2][3][4][5][6][7][8][9][10][11] Many silicon-based active photonics components, such as high-speed modulators and Ge photodetectors [4][5][6][7][8][9][10] have been demonstrated on submicron waveguides. However, submicron SOI waveguides still suffer from high fiber coupling loss, high polarization dependent loss, and large waveguide birefringence and phase noise.…”

mentioning

confidence: 99%

High-speed Ge photodetector monolithically integrated with large cross-section silicon-on-insulator waveguide

Feng¹,

Liao²,

Dong³

et al. 2009

Applied Physics Letters

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185

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We demonstrate a compact, high speed Ge photodetector efficiently butt-coupled with a large cross-section silicon-on-insulate (SOI) waveguide in which the Ge p-i-n junction is placed in the horizontal direction to enable very high speed operation. The demonstrated photodetector has an active area of only 0.8×10 μm2, greater than 32 GHz optical bandwidth, and a responsivity of 1.1 A/W at a wavelength of 1550 nm. Very importantly the device can readily be integrated with high performance wavelength-division-multiplexing filters based on large cross-section SOI waveguide to form monolithic integrated silicon photonics receivers for multichannel terabit data transmission applications.

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mentioning

confidence: 99%

High-speed Ge photodetector monolithically integrated with large cross-section silicon-on-insulator waveguide

Feng¹,

Liao²,

Dong³

et al. 2009

Applied Physics Letters

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185

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“…This exceptionally low value indicates significant improvement over the standard approach of using slow, high-threshold lasers and external modulator components. For example, typical 'low' power ring-based modulators require an average energy per bit of ~500 fJ whereas MZI modulators have pJ switching energies 4,18 . Information can just as easily be communicated over a directly modulated low-power source, skipping the external modulator altogether.…”

Section: Discussionmentioning

confidence: 99%

Ultrafast Direct Modulation of a Single-Mode Photonic Crystal Nanocavity Light-Emitting Diode

Shambat

Ellis

Majumdar

et al. 2012

Conference on Lasers and Electro-Optics 2012

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Low-power and electrically controlled optical sources are vital for next generation optical interconnect systems to meet strict energy demands. Current optical transmitters consisting of high-threshold lasers plus external modulators consume far too much power to be competitive with future electrical interconnects. Here we demonstrate a directly modulated photonic crystal nanocavity light-emitting diode (LED) with 10 GHz modulation speed and less than 1 fJ per bit energy of operation, which is orders of magnitude lower than previous solutions. The device is electrically controlled and operates at room temperature, while the high modulation speed results from the fast relaxation of the quantum dots used as the active material. By virtue of possessing a small mode volume, our LED is intrinsically single mode and, therefore, useful for communicating information over a single narrowband channel. The demonstrated device is a major step forward in providing practical low-power and integrable sources for on-chip photonics.

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“…Microresonator-based modulators based on carrier depletion have also been developed in order to achieve high-speed modulation in a smaller device with lower power consumption. One recently result presented by Dong et al [31] achieved energy consumption of 50 fJ b -1 , a 3 dB bandwidth of 11 GHz and 2 V peak-to-peak voltage. Th e fastest ring resonator carrier-depletion-based modulator reported to date operates with a small signal bandwidth of >35 GHz [32].…”

Section: High-speed Optical Modulatorsmentioning

confidence: 98%

Device engineering for silicon photonics

Chen

Tsang

2011

NPG Asia Mater

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A fter an impressive initial spurt of progress in device engineering during the early 2000s when the optical communications industry saw unprecedented levels of investment, silicon photonics continues to develop at an amazing pace. Many novel applications and devices are emerging. Silicon photonics has the potential to become a major platform for optoelectronic integrated circuits (OEICs) and to be used in high-speed optical interconnects for chip-level data communications because of the extremely large bandwidth and high speed off ered by optical communications. Many challenges have been addressed through the introduction of innovative ideas, paving the way for the practical deployment of silicon-based optoelectronic devices and integrated photonic circuits in computing and telecommunication systems [1]. Th e commercialization of silicon photonics, originally driven by applications in telecommunications, is now also driven by the needs of the computing industry for highspeed, energy-effi cient optical cable technology, such as the Light Peak Technology under development by Intel (USA). Th e California-based company Luxtera (USA) has also commercialized a series of siliconphotonic transceiver systems.Silicon off ers many advantages over alternative material systems (e.g. InP, GaAs, LiNbO 3 ) for OEIC applications. One major reason for the wide interest that silicon photonics is attracting is the cost advantage that silicon photonics can potentially off er through its compatibility with the complementary metal-oxide-semiconductor (CMOS) fabrication processes used in the microelectronics industry. Th e huge investments that have been made in CMOS microelectronics fabrication technologies has resulted in processes that off er much higher yield than is possible using alternative materials for photonics, thus making feasible large-scale integration and the production of silicon-photonic devices that are monolithically integrated with not only optical components but also electronic circuits in the same platform at ultrahigh density. Another reason for the attractiveness of silicon photonics is the high refractive index contrast between the silicon core (refractive index, 3.48) and silicon dioxide cladding (refractive index, 1.45) in silicon-on-insulator (SOI) devices, which ensures the submicrometer confi nement of light and allows tight bending in optical waveguides. Th e high-density integration of photonic circuits on SOI platforms is thus feasible. Th e low cost of high-quality SOI wafers is another advantage of silicon photonics. All kinds of low-cost devices enabled by silicon photonics are therefore predicted, and these may also enjoy the other benefi ts of monolithic integration: smaller size, increased power effi ciency and improved reliability. Figure 1 shows an example of a high-density integrated photonics devices fabricated on a 6-inch SOI wafer using CMOS-compatible technology.In this article, we review some of the exciting progress that has been made in silicon photonics with the aim of providing a broa...

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Low V_pp, ultralow-energy, compact, high-speed silicon electro-optic modulator

Cited by 428 publications

References 16 publications

High-speed Ge photodetector monolithically integrated with large cross-section silicon-on-insulator waveguide

High-speed Ge photodetector monolithically integrated with large cross-section silicon-on-insulator waveguide

Ultrafast Direct Modulation of a Single-Mode Photonic Crystal Nanocavity Light-Emitting Diode

Device engineering for silicon photonics

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