LSA Oscillator-Diode Theory

Abstract

of some of the contacts. This has not as yet been investigated further.In summary, evaporated metallic contacts (Mg, In, Au, Pd, Pt) have been made to conducting strontium titanate single crystals and measurements of the electrical properties of the contacts were carried out with the following results:(1) The electrical properties of the contacts are different for the different contact metals.(2) The low-work-function metals (Mg and In) form low-resistance contacts. JOURNAL OF APPLIED PHYSICS(3) The high-work-function metals (Au, Pd, and Pt) form blocking contacts.(4) None of the blocking contacts can be characterized by a single value of !1cP, i.e., each blocking contact behaves as if it consists of patches of different !1cP. ACKNOWLEDGMENTSIt is a pleasure to thank S. S. Perlman and R. S.Silver for helpful suggestions and assistance concerning reduction and etching of SrTi0 3 • We also wish to thank J. Breece for assistance in carrying out some of the measurements.The efficiency, negative resistance, and conditions for space-charge control relevant to operation of a bulk semiconductor diode in the limited space-charge accumulation (LSA) mode of oscillation are discussed. Numerical results for n-GaAs indicate a maximum dc to rf-conversion efficiency of 18.5% for sine-wave excitation. The usable range of doping to frequency for n-GaAs is found to be 2X1Q4 to 2x1Q6 sec/cm 3 with an optimum value of about 6 X 1Q4 sec/cm s . Although a reduction in efficiency at frequencies above 100 GHz is expected due to the finite response time of GaAs, worthwhile efficiency may be obtained at several hundred GHz.

Total and partial amplitude death in networks of diffusively coupled oscillators

“…2, Chapter XVI]. Later, amplitude death was observed in electronic systems [22,23] and chemical oscillators [24], causing renewed interest in this area. A theoretical analysis was given in [25], which considered a pair of linearly coupled oscillators each of which is near a Hopf bifurcation.…”

Bloch gain in dc-ac-driven semiconductor superlattices in the absence of electric domains

“…This effect in SLs is similar to the so-called limited space-charge accumulation ͑LSA͒ mode of operation known in semiconductor devices with hot electrons. [21][22][23] The finding 20 can potentially be used for the construction of a terahertz amplifier with a large offset. However, to realize the terahertz oscillator, it is still necessary to understand how to avoid the destructive electric domains at small amplitudes in order to reach the large-amplitude regime supporting the stable operation of the device.…”

Research on the origin of negative effect in uniform doping GaN-based Gunn diode under THz frequency

“…From the discovery of Gunn effect, it has been widely accepted that the ability to convert DC power into AC power comes from the negative effect existed in Gunn diode [12,13].The AC power is induced by the periodic motion of electronic domains in the device with a fundamental frequency the same with reciprocal of electronic domains period. Earlier simulations by drift-diffusion model have shown that when electronic domain arrives at device anode, current will reach a maximum value [12].…”

“…Earlier simulations by drift-diffusion model have shown that when electronic domain arrives at device anode, current will reach a maximum value [12]. From then on, this concept has been widely accepted in subsequent research and teaching materials [8][9][10][11][12][13][14].…”