&lt;title&gt;Bandgap of hexagonal InN and InGaN alloys&lt;/title&gt;

Davydov, V. Yu.; Klochikhin, A. A.; Емцев, В. В.; Сахаров, А. В.; Иванов, С. В.; Vekshin, V. A.; Bechstedt, F.; Furthmueller, J; Aderhold, J.; Graul, J.; Мудрый, А. В.; Harima, Hiroshi; Hashimoto, Akihiro; Yamamoto, Akio; Wu, Junqiao; Feick, H.; Häller, E. E.

doi:10.1117/12.511325

Cited by 10 publications

(9 citation statements)

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“…However, both these values are larger than those reported for high-quality InN. 13) It is thus thought that large amounts of impurities such as oxygen, hydrogen, and/or chlorine were incorporated into both layers, although…”

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confidence: 44%

Effect of High NH₃Input Partial Pressure on Hydride Vapor Phase Epitaxy of InN Using Nitrided (0001) Sapphire Substrates

Togashi¹,

Yamamoto²,

Karlsson³

et al. 2013

Jpn. J. Appl. Phys.

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The influence of the source gas supply sequence prior to growth and the NH 3 input partial pressure (Pº NH3 ) on the nucleation of InN islands during the initial stages of hydride vapor phase epitaxy on a nitrided (0001) sapphire substrate was investigated.The crystalline quality of the InN layer after subsequent lateral growth was also examined. When NH 3 was flowed prior to growth, single-crystal hexagonal InN islands formed. When InN was grown with a higher Pº NH3 , the number of InN islands decreased remarkably while their diameter increased. The crystalline quality of InN grown on the hexagonal islands with a high Pº NH3 significantly improved with increasing growth time.A strong PL spectrum was observed only from InN layers grown with a high Pº NH3 . It was thus revealed that an NH 3 preflow and a high Pº NH3 are effective for producing InN with high crystalline quality and good optical and electrical properties.

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confidence: 44%

Effect of High NH₃Input Partial Pressure on Hydride Vapor Phase Epitaxy of InN Using Nitrided (0001) Sapphire Substrates

Togashi¹,

Yamamoto²,

Karlsson³

et al. 2013

Jpn. J. Appl. Phys.

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“…The application of InGaN‐structures in light‐emitting diodes (LEDs) and laser diodes (LD) is very attractive since they possess the ability to cover the whole visible spectrum from 3.42 1 to 0.65 eV 2, 3, depending on the amount of indium. One principle problem, especially for green emitting indium containing nitrides, is the quantum confined Stark effect due to strong internal electric polarization fields in the c‐direction 4.…”

Section: Introductionmentioning

confidence: 99%

High wavelength tunability of InGaN quantum wells grown on semipolar GaN pyramid facets

Wächter

Meyer

Metzner

et al. 2010

Physica Status Solidi (b)

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Pyramidal GaN structures were deposited by selective metalorganic vapor phase epitaxy (MOVPE) to create semipolar facets. On top of these pyramids InGaN was deposited forming nanostructures of different dimensionality according to the varying strain regions along the pyramid. We have studied the emission properties of pyramid ensembles using low-temperature time-resolved photoluminescence (PL) spectroscopy. The observed PL spectra in conjunction with the revealed decay times indicate already the expectations of regions with different confinement on the pyramids. Changing the size of the pyramids and the indium supply lead to variations in the emission wavelength of the ensemble. Spatially resolved cathodoluminescence (CL) experiments were performed to analyze locally the emission properties all over the pyramidal structures. We have found that indeed the indium accumulates at the edges and the apex of the pyramids. Furthermore the emission of the quantum well (QW) sidewalls exhibit also a shift in emission energy which can be attributed again to a change of the In-content or a change of the QW thickness.

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“…It is obvious that the reason of such a significant difference between obtained bowing parameters originates from high carrier concentration induced effects on the bandgap energy and explains the contradiction between the bandgap parameters obtained by different research groups. 12,[23][24][25][26] Our calculations showed that if the carrier concentration is higher than 10 18 cm À3 , the composition dependence of the bandgap energy of Ga x In 1Àx N alloy cannot be determined from PL measurements directly and high carrier concentration effects must be taken into account for the interpretation of PL spectra. Temperature dependent PL measurements were also carried out on the samples in order to determine the true temperature dependence of bandgap energy.…”

Section: Resultsmentioning

confidence: 99%

High carrier concentration induced effects on the bowing parameter and the temperature dependence of the band gap of GaxIn1−xN

Donmez

Güneş

Erol

et al. 2011

Journal of Applied Physics

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The influence of intrinsic carrier concentration on the compositional and temperature dependence of the bandgap of Ga x In 1Àx N is investigated in nominally undoped samples with Ga fractions of x ¼ 0.019, 0.062, 0.324, 0.52, and 0.56. Hall Effect results show that the free carrier density has a very weak temperature dependence and increases about a factor of 4, when the Ga composition increases from x ¼ 0.019 to 0.56. The photoluminescence (PL) peak energy has also weak temperature dependence shifting to higher energies and the PL line shape becomes increasingly asymmetrical and broadens with increasing Ga composition. The observed characteristics of the PL spectra are explained in terms of the transitions from free electron to localized tail states and the high electron density induced many-body effects. The bowing parameter of Ga x In 1Àx N is obtained from the raw PL data as 2.5 eV. However, when the high carrier density induced effects are taken into account, it increases by about 14% to 2.9 eV. Furthermore, the temperature dependence of the PL peak becomes more pronounced and follows the expected temperature dependence of the bandgap variation.

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<title>Bandgap of hexagonal InN and InGaN alloys</title>

Cited by 10 publications

References 4 publications

Effect of High NH₃Input Partial Pressure on Hydride Vapor Phase Epitaxy of InN Using Nitrided (0001) Sapphire Substrates

Effect of High NH₃Input Partial Pressure on Hydride Vapor Phase Epitaxy of InN Using Nitrided (0001) Sapphire Substrates

High wavelength tunability of InGaN quantum wells grown on semipolar GaN pyramid facets

High carrier concentration induced effects on the bowing parameter and the temperature dependence of the band gap of GaxIn1−xN

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<title>Bandgap of hexagonal InN and InGaN alloys</title>

Cited by 10 publications

References 4 publications

Effect of High NH3Input Partial Pressure on Hydride Vapor Phase Epitaxy of InN Using Nitrided (0001) Sapphire Substrates

Effect of High NH3Input Partial Pressure on Hydride Vapor Phase Epitaxy of InN Using Nitrided (0001) Sapphire Substrates

High wavelength tunability of InGaN quantum wells grown on semipolar GaN pyramid facets

High carrier concentration induced effects on the bowing parameter and the temperature dependence of the band gap of GaxIn1−xN

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Effect of High NH₃Input Partial Pressure on Hydride Vapor Phase Epitaxy of InN Using Nitrided (0001) Sapphire Substrates

Effect of High NH₃Input Partial Pressure on Hydride Vapor Phase Epitaxy of InN Using Nitrided (0001) Sapphire Substrates