&lt;title&gt;Direct to digital holography for semiconductor wafer defect detection and review&lt;/title&gt;

Thomas, C. E.; Bahm, Tracy M.; Baylor, L. R.; Bingham, Philip R.; Burns, Steven W.; Chidley, Matt; Dai, Long; Delahanty, Robert J.; Doti, Christopher J.; El-Khashab, Ayman; Fisher, Robert L.; Gilbert, Judd M.; Goddard, Jim; Hanson, G. R.; Hickson, Joel D.; Hunt, Martin A.; Hylton, Kathy W.; John, George Kunnackal; Jones, Michael L.; MacDonald, K.; Mayo, Michael W.; McMackin, Ian; Patek, Dave R.; Price, John H.; Rasmussen, D. A.; Schaefer, Louis J.; Scheidt, Thomas R.; Schulze, Mark A.; Schumaker, Philip; Shen, Bichuan; Smith, Randall G.; Su, Allen N.; Tobin, Kenneth W.; Usry, William R.; Voelkl, E.; Weber, Kurt; Jones, Paul G.; Owen, Robert W.

doi:10.1117/12.475659

Cited by 11 publications

(5 citation statements)

References 3 publications

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“…Attempts have been made to apply interference contrast microscopy to defect inspection 10 . This class of techniques has the potential to recover signal entitlement following wavelength scaling and to improve detection of defects with a strong z-component (change in height).…”

Section: Review Of Super-resolution Techniquesmentioning

confidence: 99%

Defect metrology challenges at the 11-nm node and beyond

Crimmins

2010

SPIE Proceedings

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Rapid, inline inspection of wafers and reticles for minimum pitch defects is expected to be a significant technical challenge at the 11nm node. With the possible future adoption of EUV lithography, increasingly exotic materials and complex device architectures, projecting end user requirements is a difficult feat 4 to 5 years out. The present work progresses through projections of these requirements and surveys the various options available to the industry, supported by microscopy simulations. The main conclusion is that the industry needs to support pathfinding projects to develop super-resolution techniques, wavelength scaling and highly multiplexed, high defect contrast ebeam inspection.

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Section: Review Of Super-resolution Techniquesmentioning

confidence: 99%

Defect metrology challenges at the 11-nm node and beyond

Crimmins

2010

SPIE Proceedings

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“…The carrier frequency generated by the interference fringes is usually separated from the autocorrelation peak with at least two fringes across the optical resolution (Rayleigh resolution) [1]. Then the centroid of carrier peak is identified, and a frequency zero phase low phase filter is applied to the side-bands to extract the holographic spectrum in half FFT size.…”

Section: Introductionmentioning

confidence: 99%

Application of autofocus algorithms in holographic reconstruction

Shen

Chen

2009

SPIE Proceedings

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A digital holographic reconstruction in the frequency and spatial domain is presented in this paper. This technique applies Fourier transform on heterodyne hologram with interference fringes then the complex amplitude and phase information are extracted from its sidebands. Reconstruction of the phase and amplitude image is completed through inverse Fourier transform back to spatial domain. For best holographic reconstruction qualities, a blind deconvolution filtering and an image based autofocus spatial processing are also adopted and discussed. Experiments show satisfying reconstruction results.

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“…The interference fringes that carry the phase information of the wave emanating from the wafer surface are clearly vis ible. Further details about the technology incorporated into the Fathom tool are described in Thomas et al [6,7]. …”

Section: Technology Overviewmentioning

confidence: 99%

“…The information contained in the sideband around this carrier frequency is the (resolution-limited) complex wavefront information. By extracting one of the two sidebands from the Fourier transform, applying a digital lowpass filter to remove any unwanted contribution from the autocorrelation band or possible aliased frequencies (see Figure 4), and computing the inverse Fourier transform, the complex wavefront from the target arm is reproduced in digital form [6][7][8][9]. This digital reproduction is, of course, subject to the distortions introduced to it by the optical imaging system and also by computational and quantization error.…”

Section: Image Reconstructionmentioning

confidence: 99%

“…In addition, the detection technology provides direct information about the topology and material characteristics than can be used to aid the differentiation of defect severity. Thomas, et al reported on the fundamentals of a novel digital holography implementation and its application in the semiconductor inspection and review processes [6]. The first production ready version of an inspection tool based on this technology, named Fathom™, has been in the characterization and evaluation process over the past 9 months.…”

Section: Introductionmentioning

confidence: 99%

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Semiconductor wafer defect detection using digital holography

Schulze¹,

Hunt²,

Voelkl³

et al. 2003

Process and Materials Characterization and Diagnostics in IC Manufacturing

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Defect inspection metrology is an integral part of the yield ramp and process monitoring phases of semiconductor manufacturing. High aspect ratio structures have been identified in the ITRS as critical structures where there are no known manufacturable solutions for defect detection. We present case studies of a new inspection technology based on digital holography that addresses this need. Digital holography records the amplitude and phase of the wavefront from the target object directly to a single image acquired by a CCD camera. Using deep ultraviolet laser illumination, digital holography is capable of resolving phase differences corresponding to height differences as small as several nanometers. Thus, the technology is well suited to the task of finding defects on semiconductor wafers. We present a study of several defect detection benchmark wafers, and compare the results of digital holographic inspection to other wafer inspection technologies. Specifically, digital holography allows improved defect detection on high aspect ratio features, such as improperly etched contacts. In addition, the phase information provided by digital holography allows us to visualize the topology of defects, and even generate three-dimensional images of the wafer surface comparable to scanning electron microscope (SEM) images. These results demonstrate the unique defect detection capabilities of digital holography.

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<title>Direct to digital holography for semiconductor wafer defect detection and review</title>

Cited by 11 publications

References 3 publications

Defect metrology challenges at the 11-nm node and beyond

Defect metrology challenges at the 11-nm node and beyond

Application of autofocus algorithms in holographic reconstruction

Semiconductor wafer defect detection using digital holography

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