<title>Nonvolatile high-density high-performance phase-change memory</title>

Nanoionics-Based Three-Terminal Synaptic Device Using Zinc Oxide

“…Needless to say that they should have low energy dissipation and materials chosen should be compatible with mainstream technology. To realise physical devices with a synaptic function with low energy consumption and small foot print, two-terminal based resistive switches 15,16 , phase change memories 17,18 , conductive bridge devices 19,20 , ferroelectric thin films 21,22 and three-terminal field-effect transistors [23][24][25][26] have been proposed. Two terminal synaptic devices functioning as connecting elements between the pre and post neurons, have the limitation that signal transmission and learning functions cannot be carried out simultaneously.…”

“…17,18,25,28 Moreover, synaptic weight modulation is mainly by engineering the pulse width and height by overlapping pulses, rather than frequency and relative timing of the spikes that is utilised in biological systems. However, three terminal synaptic devices, similar to biological neural systems, are able to realise both signal transmission and learning functions, where signal transmission is carried via the channel medium and synaptic weights are modulated independently via the gate terminals.…”

Overview of non-volatile memory technology: markets, technologies and trends

“…38 Since then, efforts to bring the PCM basic concept to a mature technology level has constantly increased and many groups have started to study, develop and integrate the memory cell into MultiMegabit arrays.…”

Recent Development in Phase Change Memory

“…In 1999 the idea to have a semiconductor NVM cell based on the phase change of a chalcogenide material has been presented again [4][5]. Since then the effort to bring the PCM basic concept to a mature technology level has constantly increased and many groups have started to study, to develop and to integrate in MultiMegabit array the memory cell.…”