Luminescence, electronic absorption and vibrational IR and Raman studies of binary and ternary cerium ortho-, pyro- and meta-phosphates doped with Pr3+ ions

Szczygieł, I.; Macalik, L.; Radomińska, Ewa; Znamierowska, T.; Mączka, M.; Godlewska, P.; Hanuza, J.

doi:10.1016/j.optmat.2006.04.015

Cited by 39 publications

(17 citation statements)

References 53 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The structural and spectroscopic properties of the alkali metal lanthanide double phosphates, M 3 R(PO 4 ) 2 (R = trivalent lanthanide ions), doped with different lanthanide ions have been subject to considerable interest in the past [19][20][21][22][23][24][25][26][27][28][29][30][31][32][33][34][35][36]. However, there are no detailed reports on the photo-luminescent properties of Na 3 Gd(PO 4 ) 2 :Eu 3+ under NUV excitation, i.e., little research on potential application in phosphor-converted WLEDs has been report.…”

Section: Introductionmentioning

confidence: 99%

Luminescent properties of Na3Gd1−xEux(PO4)2 and energy transfer in these phosphors

Chen

et al. 2011

Journal of Alloys and Compounds

View full text Add to dashboard Cite

Section: Introductionmentioning

confidence: 99%

Luminescent properties of Na3Gd1−xEux(PO4)2 and energy transfer in these phosphors

Chen

et al. 2011

Journal of Alloys and Compounds

View full text Add to dashboard Cite

“…Comparison of the X-ray patterns for the studied by us previously meta-and orthophosphates [28] with those studied here in the submicro states indicate that their diffraction lines do not differ in the band half-width but the intensity of the respective lines is slightly reduced.…”

Section: Resultsmentioning

confidence: 50%

Luminescence and optical absorption studies of submicro-dimensional cerium ortho- and metaphosphates doped with Eu3+ ions

Matraszek

Macalik

Szczygieł

et al. 2008

Journal of Alloys and Compounds

Self Cite

View full text Add to dashboard Cite

“…c) Comparison of experimental splittings from the lowest 2 F 5/2 ground state to the 2 F 7/2 manifold obtained from the data shown in (a) and (b) with the fi t obtained from the crystal fi eld analysis, and with Ce 3+ transitions from the lowest 2 F 5/2 level to the 2 F 7/2 manifold in LaF 3 and in CeF 3 measured by mid-IR absorbance. [ 42 ] The energy splittings in the free Ce 3+ [ 43 ] are also shown.…”

Section: Silicon Band-edge-modifi Ed Rare-earth Luminescencementioning

confidence: 95%

“…We note that due to the elimination of the unshielded 5d 1 starting state, this is the fi rst PL associated with Ce in any material that reveals the inherent crystal fi eld splitting of the 2 F 5/2 and 2 F 7/2 manifolds previously only observed in mid-IR absorption. [ 42 ] Figure 5 c shows a comparison of Si:B&Ce experimental and theoretical splittings from the lowest 2 F 5/2 ground state level to the 2 F 7/2 manifold calculated using the data shown in Figure 5 a,b with Ce 3+ transitions from the lowest 2 F 5/2 level to the 2 F 7/2 manifold in LaF 3 and in CeF 3 measured by mid-IR absorbance [ 43 ] and with the f -f splitting of the Ce 3+ free ion. [ 43 ] Again, a strong correspondence of the spectral features in Si:B&Ce and in other hosts is observed.…”

Section: Silicon Band-edge-modifi Ed Rare-earth Luminescencementioning

confidence: 99%

Silicon‐Modified Rare‐Earth Transitions—A New Route to Near‐ and Mid‐IR Photonics

Lourenço

Hughes

Lai

et al. 2016

Adv Funct Materials

View full text Add to dashboard Cite

1986 wileyonlinelibrary.com devices using alternative direct band gap semiconductors. This hybridization is highly undesirable, seriously violating the paramount technological and cost advantages inherent in silicon integration that has driven its exponential growth. The ultimate vision of silicon integration is a totally single silicon solution incorporating both electronic and photonic functions. Here we report a novel phenomenon-siliconmodifi ed rare-earth (RE) transitions-and demonstrate light emitting diodes (LEDs) and mid-IR photodetectors. Universally, luminescence from RE-doped semiconductors has shown only the expected characteristic intrinsic transitions; consequently emission from REs with transitions greater than the semiconductor band gap energy should not occur. Europium, ytterbium, and cerium have their lowest energy transitions well above the band gap energy of silicon. Remarkably, we see photoluminescence (PL) and electroluminescence (EL) due to Eu, Yb, and Ce in silicon but dramatically redshifted in wavelength and strikingly enhanced in intensity by up to 900 times compared with conventional RE-doped silicon LEDs. These results refute previous thinking on the interaction of REs with semiconductors and offer a promising route to effi cient, fully silicon-based, optoelectronic devices across the near-and mid-IR.Silicon photonics has seen rapid advances [1][2][3][4][5][6][7][8][9][10][11][12] and the technology is seen not just as required for next-generation computers but also as a vehicle for a wide range of other high value and important, societal, environmental, security, and health applications, such as greenhouse gas and explosive residue sensing, and fast medical diagnostics. [ 13 ] REs elements in silicon have long been considered promising for optical sources, and more recently for quantum technologies. [ 14 ] The partially fi lled inner 4 f -shell gives sharp internal transitions highly insensitive to crystal host and temperature and many of the transitions have intrinsic gain and support lasing. However, because the transitions are internal to the RE they have not been seen so far as a particularly promising route to photodetectors.Light emission at 1.54 µm due to Er ions in III-V and Si has been extensively investigated and light emitting devices successfully demonstrated although with limited effi ciency. [15][16][17][18][19][20][21] PL and EL from silicon and III-V semiconductors incorporating the RE thulium have also been achieved-transitions between the Tm 3+ lowest excited states and the ground state lead to emissions around 0.8, 1.2, and 2 µm. [22][23][24] Both Er and Tm in silicon, and indeed all others RE reported in silicon Silicon-Modifi ed Rare-Earth Transitions-A New Route to Near-and Mid-IR Photonics Manon A. Lourenço , * Mark A. Hughes , Khue T. Lai , Imran M. Sofi , Willy Ludurczak , Lewis Wong , Russell M. Gwilliam , and Kevin P. Homewood Silicon underpins microelectronics but lacks the photonic capability needed for next-generation systems and currently relies on ...

show abstract

Luminescence, electronic absorption and vibrational IR and Raman studies of binary and ternary cerium ortho-, pyro- and meta-phosphates doped with Pr3+ ions

Cited by 39 publications

References 53 publications

Luminescent properties of Na3Gd1−xEux(PO4)2 and energy transfer in these phosphors

Luminescent properties of Na3Gd1−xEux(PO4)2 and energy transfer in these phosphors

Luminescence and optical absorption studies of submicro-dimensional cerium ortho- and metaphosphates doped with Eu3+ ions

Silicon‐Modified Rare‐Earth Transitions—A New Route to Near‐ and Mid‐IR Photonics

Contact Info

Product

Resources

About