2008
DOI: 10.3952/lithjphys.48312
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Luminescence study of ZnSe based scintillators in frequency domain

Abstract: Photoluminescence of ZnSe-based scintillation crystals is studied. Photoluminescence intensities and spectra of isoelectronically doped ZnSe(Te), ZnSe(O), and ZnSe(O,Al) are compared. Frequency domain luminescence lifetime measurement technique was applied to study carrier dynamics at low density of nonequilibrium carriers, which is typical for operation of high-sensitivity ZnSe-based radiation detectors. Temperature-dependent competition between donor-acceptor-pair-type and exponential luminescence decay comp… Show more

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Cited by 4 publications
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“…The best results in case of co-doping of ZnSe with O and Al is due to the fact that aluminium impurity augments incorporation of oxygen into ZnSe crystal. The higher density of the defects centres formed due to this is responsible for efficient emissions [106]. In recent years the mechanism of the influence of the rare-earth doping on the afterglow has also been studied on doped ZnSe samples by introducing CeO 2 , Sm 2 O 3 or Sm 2 S 3 etc.…”
Section: Effect Of Doping On Znse Based Scintillatorsmentioning
confidence: 99%
“…The best results in case of co-doping of ZnSe with O and Al is due to the fact that aluminium impurity augments incorporation of oxygen into ZnSe crystal. The higher density of the defects centres formed due to this is responsible for efficient emissions [106]. In recent years the mechanism of the influence of the rare-earth doping on the afterglow has also been studied on doped ZnSe samples by introducing CeO 2 , Sm 2 O 3 or Sm 2 S 3 etc.…”
Section: Effect Of Doping On Znse Based Scintillatorsmentioning
confidence: 99%