Advanced Magnetic Materials 2012
DOI: 10.5772/39103
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M-Type Barium Hexagonal Ferrite Films

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Cited by 22 publications
(16 citation statements)
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“…19,20 During the deposition, the oxygen pressure was 100 mTorr, the substrate-to-target separation was fixed at 6 cm, and the energy fluence of the laser beam was set to 0.7 J/cm 2 . The substrate temperature was varied as follows: 700 C for 5 min, 800 C for 30 min, 700 C for 30 min, and 800 C for 30 min.…”
mentioning
confidence: 99%
See 1 more Smart Citation
“…19,20 During the deposition, the oxygen pressure was 100 mTorr, the substrate-to-target separation was fixed at 6 cm, and the energy fluence of the laser beam was set to 0.7 J/cm 2 . The substrate temperature was varied as follows: 700 C for 5 min, 800 C for 30 min, 700 C for 30 min, and 800 C for 30 min.…”
mentioning
confidence: 99%
“…These values are close to those for high-quality BaM thin films reported previously. [20][21][22] (3) The film has a large remanent magnetization-to-saturation magnetization ratio of about 0.89 along the c axis. This large ratio results from the strong in-plane uniaxial anisotropy.…”
mentioning
confidence: 99%
“…The hexaferrites are complex oxide systems with a general chemical formula AO-Fe 2 O 3 -MO, where A is a large divalent cation, i.e., Ba, Sr, Ca, and M are a small divalent cation, i.e., Mn, Fe, Co, Ni, Cu, and Zn. They can be classified on the basis of their chemical composition and the A-M combination and the crystal structure into six fundamental, structural types: M, W, Y, X, U, and Z [8][9][10][11][12][13].…”
Section: Introductionmentioning
confidence: 99%
“…M‐type barium hexaferrite (BaM) has been widely used in various microwave applications due to its large uniaxial magnetic anisotropy . Especially, in‐plane c ‐axis highly oriented BaM film has drawn much attention in recent years for two reasons.…”
Section: Introductionmentioning
confidence: 99%
“…M -TYPE barium hexaferrite (BaM) has been widely used in various microwave applications due to its large uniaxial magnetic anisotropy. [1][2][3][4][5][6][7][8][9][10] Especially, in-plane c-axis highly oriented BaM film has drawn much attention in recent years for two reasons. One is its higher ferromagnetic resonance (FMR) frequency, about 45% larger than that of outof-plane c-axis oriented films at zero bias field; 11 the other is the minimized in-plane self-demagnetization effects that generally lead to high hysteresis loop squareness (M r /M s ) value, making self-biased operation possible in components utilizing such materials, 12 which holds much promise for further device miniaturization.…”
Section: Introductionmentioning
confidence: 99%