Magnesium effects on CdSe self-assembled quantum dot formation on ZnxCdyMg1−x−ySe layers

Perez-Paz, M. Noemi; Lü, Hong; Shen, Aidong; Mary, F. Jean; Akins, Daniel L.; Tamargo, M. C.

doi:10.1016/j.jcrysgro.2006.06.048

Cited by 3 publications

(1 citation statement)

References 38 publications

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“…16 In particular, a careful control of the QD morphology and the QD arrangement is needed for QD based quantum cascade laser ͑QCL͒ and quantum dot infrared photodetector ͑QDIP͒ applications that rely on intersubband ͑ISB͒ transitions. 19 Higher magnesium concentration resulted in a smaller size, a higher density, and a very narrow size distribution of the SQD layers of CdSe grown on Zn x Cd y Mg 1−x−y Se barriers. 17 Furthermore, the volume density of a single QD ͑SQD͒ layer is rather low, so the laser and detector applications turn out to be practically unfeasible without using more than one single layer.…”

Section: Introductionmentioning

confidence: 99%

Formation and optical properties of stacked CdSe self-assembled quantum dots on ZnxCdyMg1−x−ySe barriers

Perez-Paz

Lü

Shen

et al. 2006

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Single layer and stacked CdSe self-assembled quantum dots with ZnCdMgSe barriers for visible and white light emitters J.Multiquantum dot ͑MQD͒ layers of CdSe with Zn x Cd y Mg 1−x−y Se barriers have been grown by self-assembly ͑SA͒ using molecular beam epitaxy on ͑001͒ InP substrates and their optical and structural properties studied by steady state, polarized and power dependence photoluminescence ͑PL͒ studies, x-ray diffraction, and atomic force microscopy ͑AFM͒. Two sets of MQD structures of CdSe SAQDs were grown with different Mg contents in the Zn x Cd y Mg 1−x−y Se. Uncapped structures were also grown. The control of the electronic coupling of CdSe MQDs has been achieved by varying two parameters: the MgSe content on the Zn x Cd y Mg 1−x−y Se barrier and the Zn x Cd y Mg 1−x−y Se spacer thickness. Samples with properties intermediate between those of totally coupled MQDs and uncoupled ones were also grown. Results show that for the edge emission, polarization is mostly TM for the case of coupled QDs, indicating an excitonic delocalization along the growth axis, and TE polarized for the uncoupled QDs. For the surface configuration, the PL emission was slightly TM polarized for the uncoupled case, suggesting a surface organization. AFM images of an uncapped sample grown under the same conditions than the capped one confirmed the formation of connected structures ͑wirelike rather than dotlike͒ in the surface. No surface organization was obtained for the coupled case.

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Section: Introductionmentioning

confidence: 99%

Formation and optical properties of stacked CdSe self-assembled quantum dots on ZnxCdyMg1−x−ySe barriers

Perez-Paz

Lü

Shen

et al. 2006

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Intersubband absorption in CdSe∕ZnxCdyMg1−x−ySe self-assembled quantum dot multilayers

Shen

Lü

Charles

et al. 2007

Applied Physics Letters

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The authors report the observation of intersubband absorption in multilayers of CdSe∕ZnxCdyMg1−x−ySe self-assembled quantum dots. The samples were grown by molecular beam epitaxy on InP substrates. For samples with the CdSe dot layers doped with Cl and with the deposited CdSe equivalent layer thickness between 5.2 and 6.9 ML, peak absorption between 2.5 and 3.5μm was observed. These materials are promising for intersubband devices operating in the mid- and near-infrared ranges.

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Influence of ZnSe capping of CdSe layers in the growth mode of ZnCdMgSe/CdSe/ZnCdMgSe heterostructures

Alfaro‐Martínez

Hernández‐Calderón

Tamargo

2016

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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The authors present a photoluminescence study of the optical and structural properties of ZnSe/CdSe/ZnSe layers grown by atomic layer epitaxy, embedded within barriers of ZnCdMgSe lattice-matched to the InP (001) substrate. The authors show that a few ZnSe monolayers surrounding the CdSe layer inhibit quantum dot formation and induce the growth of quantum islands of CdSe. For the case of a 2 monolayers coverage of CdSe, quantum islands of 1 and 2 monolayers thickness were observed. These quantum islands (or quantum terraces) present intense luminescence even at room temperature.

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Magnesium effects on CdSe self-assembled quantum dot formation on ZnxCdyMg1−x−ySe layers

Cited by 3 publications

References 38 publications

Formation and optical properties of stacked CdSe self-assembled quantum dots on ZnxCdyMg1−x−ySe barriers

Formation and optical properties of stacked CdSe self-assembled quantum dots on ZnxCdyMg1−x−ySe barriers

Intersubband absorption in CdSe∕ZnxCdyMg1−x−ySe self-assembled quantum dot multilayers

Influence of ZnSe capping of CdSe layers in the growth mode of ZnCdMgSe/CdSe/ZnCdMgSe heterostructures

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