Magnetic and structural characterization of Ni(1−x)Gex thin film

Kazan, S.; Kocaman, Bayram; Parabas, Adem; Yıldız, F.; Aktaş, B.

doi:10.1016/j.jmmm.2014.02.095

Cited by 6 publications

(1 citation statement)

References 18 publications

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“…In NiGe-Tb samples the peaks Ge 2p3/2 and Ge 3d and Ni 2p show increase in intensities and right shift which attribute to higher binding energy Ge 2p3/2 and Ge 3d core level. In the case of Ni 2p3/2 the peak intensity increase, is due to higher exposed Ni surface area and increase in the nearest Ni-Ni distance due to insertion of Tb as previously reported 37,38 . Also chemical state of Tb in the NiGe-Tb alloy could be +3, +4 corresponding to Tb 4d peak according to pervious studied 39,40 .…”

Section: Resultssupporting

confidence: 81%

Effective Schottky barrier lowering of NiGe/p-Ge(100) using Terbium interlayer structure for high performance p-type MOSFETs

Babu

Lee

Song

et al. 2020

Sci Rep

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by introducing terbium (Tb) as an interlayer in forming NiGe using Tb/Ni/TiN structure. The contact resistance value obtained using the circular transmission line model for an 8-nm thick Tb interlayer sample was 7.21 × 10 −8 Ω·cm 2 , which is two orders of magnitude less than that of reference sample (without the Tb interlayer) of 7.36 × 10 −6 Ω·cm 2 . The current-voltage characteristics were studied at a temperature range of −110 ~ 25 °C to determine the effective Schottky barrier height (eSBH). An eSBH of 0.016 eV was obtained for the 8-nm thick Tb interlayer. Various Tb interlayer thicknesses were selected to study their effect on the contact resistance. The Tb interlayer surface and structural properties were characterized using FESEM, XRD, XPS, TEM, and SIMS analyses.

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