2002
DOI: 10.1063/1.1451879
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Magnetic and transport characteristics on high Curie temperature ferromagnet of Mn-doped GaN

Abstract: Mn-doped GaN films on sapphire (0001) substrates were grown by molecular beam epitaxy system using ammonia as nitrogen source. The result of magnetization measurement gives Curie temperature as high as 940 K. The field and temperature dependencies of the magnetization show coexistence of ferromagnetic and paramagnetic phases. In addition, the temperature dependencies of electrical resistance and carrier concentration were measured to investigate the relation between the ferromagnetism and transport property. B… Show more

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Cited by 208 publications
(142 citation statements)
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“…This variation of resistivity, similar to that of (Ga,Mn)N (ref. 14), is often observed in heavily doped semiconductors. Strictly metallic behaviour (with monotonic decrease of resistivity with decreasing temperatures) is not a precondition of having a ferromagnetic coupling between Mn moments mediated by RKKY interaction, as discussed in refs 1 and 15.…”
Section: Resultsmentioning
confidence: 99%
“…This variation of resistivity, similar to that of (Ga,Mn)N (ref. 14), is often observed in heavily doped semiconductors. Strictly metallic behaviour (with monotonic decrease of resistivity with decreasing temperatures) is not a precondition of having a ferromagnetic coupling between Mn moments mediated by RKKY interaction, as discussed in refs 1 and 15.…”
Section: Resultsmentioning
confidence: 99%
“…[22][23][24][25][26][27] Spin-GGA calculations of electronic structures and magnetic properties of materials which consist of atoms having only s and p electrons are thought to be the most reliable and give satisfactory results.…”
Section: Introductionmentioning
confidence: 99%
“…[16][17][18] At this point, however, it is unclear that the ferromagnetism is mediated by a dilute carrier system and therefore electrically tunable.…”
Section: Future Prospects and Outstanding Issuesmentioning
confidence: 99%