We present an experimental study of mesoscopic, two-dimensional electronic systems at high magnetic fields. Our samples, prepared from a low-mobility InGaAs/InAlAs wafer, exhibit reproducible, sample specific, resistance fluctuations. Focusing on the lowest Landau level we find that, while the diagonal resistivity displays strong fluctuations, the Hall resistivity is free of fluctuations and remains quantized at its ν = 1 value, h/e 2 . This is true also in the insulating phase that terminates the quantum Hall series. These results extend the validity of the semicircle law of conductivity in the quantum Hall effect to the mesoscopic regime.PACS numbers: 71.30.+h, 72.80.Sk, For small, mesoscopic samples, the conductivity in the Quantum Hall (QH) regime exhibits reproducible, sample specific, fluctuations [1,2,3,4,5,6,7,8,9,10,11,12]. Although quite interesting by themselves, the greatest benefit in studying these fluctuations is that they can provide clues to the nature of the mechanism responsible for conduction in the QH regime.There are several known mechanisms that can lead to such fluctuations. Fluctuations as a result of the modification of the interference between many possible electron paths across the sample are at the heart of the theory of Universal Conductance Fluctuations (UCF) [13]. Although this theory is not expected to be valid at high magnetic fields (B), modified UCF theories have been suggested [14,15] to take into account the influence of B on the electron trajectories, and several experiments were interpreted in terms of UCF at high B [2,3].A different point of view has been suggested by two recent experimental studies: Cobden et al. [4], and Machida et al. [5] have found that in the QH regime fluctuation patterns follow straight lines in the magnetic field-carrier-density plane. These lines appear to be parallel to integer Landau level (LL) filling-factor lines. These results were attributed to charging of electron puddles in the sample [4], or to changes in a compressiblestrip network configuration [5].Another possible source of fluctuations, expected to dominate when B is high enough such that only a small number of LL are occupied, is resonant tunneling [16]. In this process fluctuations arise when an electron scatters from one edge of the sample to the other through a bulk impurity. This model was found to be consistent with observed high-B fluctuations [6], and has been used in measurements of fractional charge [7,8]. Applying this model to the case when only the lowest LL is occupied, Jain and Kivelson [16] argued that the fluctuations will be limited to the diagonal resistivity, ρ xx , leaving the Hall resistivity, ρ xy , quantized. This conjecture was contended by Bütikker [17]. Experiments have so far shown that fluctuations in ρ xx are accompanied by fluctuations in ρ xy [1,2,6], although these experiments were limited to relatively lower B's, where more than one LL participates in the conduction (ν ≥ 2).In this letter we report on an experimental study of the resistivity of meso...