Magnetic properties of N-doped graphene with high Curie temperature

Spintronics holds the promise for future information technologies. Devices based on manipulation of spin are most likely to replace the current silicon complementary metal‐oxide semiconductor devices that are based on manipulation of charge. The challenge is to identify or design materials that can be used to generate, detect, and manipulate spin. Since the successful isolation of graphene and other two‐dimensional (2D) materials, there has been a strong focus on spintronics based on 2D materials due to their attractive properties, and much progress has been made, both theoretically and experimentally. Here, we summarize recent developments in spintronics based on 2D materials. We focus mainly on materials of truly 2D nature, that is, atomic crystal layers such as graphene, phosphorene, monolayer transition metal dichalcogenides, and others, but also highlight current research foci in heterostructures or interfaces. In particular, we emphasize roles played by computation based on first‐principles methods which has contributed significantly in the designs of spintronic materials and devices. We also highlight challenges and suggest possible directions for further studies. WIREs Comput Mol Sci 2017, 7:e1313. doi: 10.1002/wcms.1313 This article is categorized under: Structure and Mechanism > Computational Materials Science Electronic Structure Theory > Ab Initio Electronic Structure Methods Electronic Structure Theory > Density Functional Theory

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“…There have been very few experimental work on magnetism in 2D materials . Difficulty in growing high‐quality samples is an issue.…”

Section: Spin Generationmentioning

confidence: 99%

Prospects of spintronics based on 2D materials

Feng

Shen

Yang

et al. 2017

WIREs Comput Mol Sci

197

135

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“…209 Recently, N-G produced via self-propagating high-temperature synthesis (SHS) showed ferromagnetic properties at a high Curie temperature. 210 Some studies of edge doping of graphene via N atoms have also reported spin polarization and magnetic moments in graphene. 211 Doped graphene nanoribbon edges showed different ranges of magnetic moment depending on the N-doping sites; moreover, N-doped graphene nanoribbons with translational grain boundaries revealed spin-polarized ferromagnetic ordering.…”

Section: Substitution Of Group Va Elements In Graphenementioning

confidence: 99%

Modulating the electronic and magnetic properties of graphene

et al. 2017

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Graphene, an sp2 hybridized single sheet of carbon atoms organized in a honeycomb lattice, is a zero band gap semiconductor or semimetal. This emerging material has been the subject of recent intensive research due to the novelty of its structural, electronic, optical, mechanical, and magnetic properties. Due to these properties, graphene is a favorable material for the fabrication of electronic devices, transparent electrodes, spintronics devices, and a growing array of several other applications that explore the potential of this marvelous material. However, the lack of intrinsic band gap and nonmagnetic nature of graphene limit its practical applications in the widely expanding field of carbon-based devices. To take advantage of the hidden potential of this material, numerous techniques have been developed to tailor its electronic and magnetic properties. These methods include the mutual interaction between graphene layer and its substrate, doping with surface adatoms, substitutional doping, vacancy creation, and edges and strain manipulation. Herein, an overview of recently emerging innovative techniques adopted to tailor the electronic and magnetic properties of graphene is presented. The limitations, possible directions for future research and applications in diverse fields of these methods are also mentionedpublishersversionPeer reviewe

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“…Therefore, despite its challenges, doping with n‐ or p‐type heteroatoms may be the most practical way to equip graphene with localized spins while maintaining a charge carrier concentration high enough to preserve its conductivity. In this context, nitrogen doping is envisioned as a method to imprint active centers into graphene to create materials suitable for organic‐based spintronics . Błoński et al recently reported that ferromagnetic spin ordering emerges in graphene doped with graphitic nitrogen.…”

mentioning

confidence: 99%

Microwave Energy Drives “On–Off–On” Spin‐Switch Behavior in Nitrogen‐Doped Graphene

et al. 2019

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over traditional semiconductor-based alternatives, including higher data processing speeds, lower power consumption, nonvolatility, and higher integration densities. [2] A central goal of spintronics is to identify materials exhibiting spindependent effects, which are required for the occurrence of spintronic processes. [1] Graphene was recently suggested to be an attractive platform for spintronic applications [3][4][5] because it exhibits several spin-related phenomena including tunnel magnetoresistance, [6] enhancement of spin-injection efficiency, [7] the Rashba effect, [8] the quantum spin Hall effect, [9] and large perpendicular magnetic anisotropy. [10] It also exhibits several properties useful in spintronics, including ballistic charge transport, [11] long spin lifetimes and spin-diffusion lengths, [12,13] limited hyperfine interactions, [14] gate-tunable magnetic order, [15] and weak spin-orbit coupling. [3] Due to its exceptionally long spin lifetime of ≈10 ns (corresponding to a spin-diffusion length of several micrometers at room temperature), graphene has an intriguing spin-conserving potential. It is thus regarded as a promising material for spin transport in spin-valve architectures, enabling faithful transmission of information encoded in a carrier's spin across a device. [4] However, because of its diamagnetism and weak spin-orbit coupling, [16] it exhibits only weak transport-current-induced spin densities and weakly spin-polarized currents. Pristine graphene cannot function as a spin generator or an injector of spin-polarized carriers, [4] but strain induced in the material arising from surface corrugation and lattice mismatch between graphene layers and underlying substrates can severely change the electronic, magnetic, and transport properties. [17,18] Strain effects are known to promote modification of the graphene bandgap and can induce spin gap asymmetry and spin-polarization effects, locally or even extended over the 2D carbon network; [17,19] thus the "strain engineering" approach bears great potential for its application in graphene-based nanofabrication technologies. [18,20] For example, Yan et al. have shown that cooperativity between strain and out-of-plane distortion in the graphene wrinkles provide valley-polarized sites with significant energy gaps, a property that offers the ground for realization of hightemperature "zero-field" quantum valley Hall effects. [21] Liu et al., upon interfacing graphene with orthorhombic black phosphorus (BP), demonstrated that both lattices can be mutuallyThe established application of graphene in organic/inorganic spin-valve spintronic assemblies is as a spin-transport channel for spin-polarized electrons injected from ferromagnetic substrates. To generate and control spin injection without such substrates, the graphene backbone must be imprinted with spin-polarized states and itinerant-like spins. Computations suggest that such states should emerge in graphene derivatives incorporating pyridinic nitrogen. The synthesis and electronic properties o...

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Magnetic properties of N-doped graphene with high Curie temperature

Cited by 85 publications

References 68 publications

Prospects of spintronics based on 2D materials

Prospects of spintronics based on 2D materials

Modulating the electronic and magnetic properties of graphene

Microwave Energy Drives “On–Off–On” Spin‐Switch Behavior in Nitrogen‐Doped Graphene

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