Magnetoelectric Effect in Amorphous Ferromagnetic FeCoSiB/Langatate Monolithic Heterostructure for Magnetic Field Sensing

Abstract

This paper investigates the possibilities of creating magnetic field sensors using the direct magnetoelectric (ME) effect in a monolithic heterostructure of amorphous ferromagnetic material/langatate. Layers of 1.5 μm-thick FeCoSiB amorphous ferromagnetic material were deposited on the surface of the langatate single crystal using magnetron sputtering. At the resonance frequency of the structure, 107 kHz, the ME coefficient of linear conversion of 76.6 V/(Oe∙cm) was obtained. Furthermore, the nonlinear ME effect of voltage harmonic generation was observed with an increasing excitation magnetic field. The efficiency of generating the second and third harmonics was about 6.3 V/(Oe2∙cm) and 1.8 V/(Oe3∙cm), respectively. A hysteresis dependence of ME voltage on a permanent magnetic field was observed due to the presence of α-Fe iron crystalline phases in the magnetic layer. At the resonance frequency, the monolithic heterostructure had a sensitivity to the AC magnetic field of 4.6 V/Oe, a minimum detectable magnetic field of ~70 pT, and a low level of magnetic noise of 0.36 pT/Hz1/2, which allows it to be used in ME magnetic field sensors.

Magnetoelectric Functionality of Ni–Mn–In-Encapsulated AlN/Ni–Mn–In/Ni-Graded Heterostructure for Flexible Magnetic Field Sensor

“…Generally, BaTiO 3 , BiFeO 3 , and lead-based piezoelectric materials such as Pb­(Zr,Ti)­O 3 (PZT), lanthanum-doped PZT (PLZT), and PMN–PT are used for studying the magnetoelectric coupling phenomenon. − ,− The BaTiO 3 and BiFeO 3 suffer low piezoelectricity in their thin films. , Researchers have been trying to introduce a piezoelectric layer with excellent piezoelectricity that is environmentally friendly and involves an easy fabrication process. The ME composite comprising a lead-free piezoelectric plate of monocrystal langatate was investigated for the ME magnetic field sensor . The single crystal lithium niobate (LiNbO 3 ) coupled with the Metglas layer was explored as ME MEMS devices .…”