1989
DOI: 10.1016/0921-4526(89)90530-9
|View full text |Cite
|
Sign up to set email alerts
|

Magnetoresistance measurements on the magnetic semiconductor Nd0.5Pb0.5MnO3

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
4

Citation Types

7
365
0
3

Year Published

1997
1997
2006
2006

Publication Types

Select...
7
2

Relationship

0
9

Authors

Journals

citations
Cited by 819 publications
(375 citation statements)
references
References 11 publications
7
365
0
3
Order By: Relevance
“…However, as the temperature increases and approaches the Curie temperature T c a sudden increase of the resistivity is observed [3]. As the temperature dependence of the resistivity ρ(T ) has typically semiconducting behavior ( dρ/dT < 0) above T c , this increase in resistivity at around T c is usually desribed as a metal-insulator transition.…”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation
“…However, as the temperature increases and approaches the Curie temperature T c a sudden increase of the resistivity is observed [3]. As the temperature dependence of the resistivity ρ(T ) has typically semiconducting behavior ( dρ/dT < 0) above T c , this increase in resistivity at around T c is usually desribed as a metal-insulator transition.…”
Section: Introductionmentioning
confidence: 99%
“…Upon doping with Sr, this perovskite oxide becomes a ferromagnetic metal; the connection between metallicity and ferromagnetism was well explained by the double exchange hopping mechanism [2]. The discovery of colossal magnetoresistance phenomena in samples with Sr dopant densities in the 0.2≤ x ≤0.4 regime [3] brought a revival of the interest to these sytems.…”
Section: Introductionmentioning
confidence: 99%
“…Whereas spin disorder can contribute to the variations in the resistivity near T c , only more recently the role of electron-phonon interactions on the localization has been put in a clearer perspective. [5][6][7] This theoretical work was based on research on magnetic semiconductors like EuO, and only recently applied to doped LaMnO 3 . Still, it is not known if the metal insulator transition in doped LaMnO 3 is driven by changes in the carrier density or the mobility.…”
mentioning
confidence: 99%
“…[1][2][3] This feature was the outbreak to highlight the strong interplay between charge, and orbital and magnetic properties exhibited by these compounds. Accordingly, they show a wide variety of electronic and magnetic phases.…”
Section: Introductionmentioning
confidence: 99%