2014
DOI: 10.1134/s0021364014140021
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Magnetotransport effects in paramagnetic Gd x Mn1 − x S

Abstract: The electrical resistance of Gd x Mn 1 -x S solid solutions with x = 0.1, 0.15, and 0.2 has been measured at mag netic field H = 0.8 T and at zero magnetic field within the 100 K < T < 550 K temperature range. The mag netoresistance peak is observed above room temperature. On heating, the composition with x = 0.2 exhibits the change of magnetoresistance sign from positive to negative and the magnetoresistance peak near the tran sition to the magnetically ordered state. The experimental data are interpreted in … Show more

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Cited by 28 publications
(12 citation statements)
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References 10 publications
(16 reference statements)
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“…With an increase in the substitution concentration, the magnitude of the magnetoresistance (δH) decreases in absolute value and δH ~ 5% for the composition X = 0.2 is observed in the paramagnetic area. This value is much smaller in comparison with magnetoresistance in solid solutions based on manganese sulfide [22][23][24]. A further increase in concentrations to X = 0.4 leads to the disappearance of the effect.…”
Section: Resultsmentioning
confidence: 83%
“…With an increase in the substitution concentration, the magnitude of the magnetoresistance (δH) decreases in absolute value and δH ~ 5% for the composition X = 0.2 is observed in the paramagnetic area. This value is much smaller in comparison with magnetoresistance in solid solutions based on manganese sulfide [22][23][24]. A further increase in concentrations to X = 0.4 leads to the disappearance of the effect.…”
Section: Resultsmentioning
confidence: 83%
“…Previously, the magnetoresistive effect in the paramagnetic region was observed in the Gd x Mn 1– x S solid solution . Gadolinium sulfide is also a metal, whose resistivity is lower than the resistivity of CeS by a factor of 3 and the lattice constant is smaller than that of CeS by 5%.…”
Section: Introductionmentioning
confidence: 97%
“…The resistance detects a small maximum in the region of formation of the orbital ordering [15], the electron density of states at the Fermi level splits in the magnetic field, which leads to an increase in the resistance in the paramagnetic phase [16][17]. The formation of an orbital ordering is accompanied by lattice deformations and changes in the magnetic state [18][19][20]. In chalcogenide compounds with polymorphic transitions, negative magnetoresistance is associated with tunneling of electrons having the same spin orientation in the magnetic field [21][22][23].…”
Section: Introductionmentioning
confidence: 99%