Mask defect printability in the spacer patterning process

Miyoshi, S; Yamaguchi, Satoru; Hirano, Takashi; Mashita, Hiromitsu; Mukai, Hidefumi; Kobiki, Ayumi; Kobayashi, Yuuji; Hashimoto, Kohji; Inoue, Soichi

doi:10.1117/12.801410

Cited by 1 publication

(2 citation statements)

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“…This means that the opaque mask defect will result in the pattern short in the spacer pattern. Figure 5 shows photographs of the programmed defects of mask and of wafer after the development of the photoresist, after core film etching, and after spacer pattern formation, for the opaque and clear defect [5] . It is shown that both the opaque and clear defects of mask result in the pattern short of the spacer pattern, as is suggested by Figure 4.…”

Section: Experimental Conditionsmentioning

confidence: 99%

“…After the fabrication of the spacer film pattern, the pattern can be transferred to the hard mask by etching using the above spacer pattern as an etching mask. In the previous study [5] , the acceptable mask defect size was obtained from the mask defect printability in the spacer patterning process using a mask for 64nm L/S (at wafer) after development that contains several programmed defects. The defects were of several sizes and of two types, namely, opaque and clear.…”

Section: Introductionmentioning

confidence: 99%

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Mask defect specification in the spacer patterning process by using a fail-bit-map analysis

et al. 2009

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We obtained the acceptable mask defect size for both opaque and clear defects in the spacer patterning process using the fail-bit-map analysis and a mask with programmed defects. The spacer patterning process consists of the development of photoresist film, the etching of the core film using the photoresist pattern as the etching mask, the deposition of a spacer film on both sides of the core film pattern, and the removal of the core film. The pattern pitch of the spacer film becomes half that of the photoresist. Both the opaque defect and the clear defect of the mask resulted in a short defect in the spacer pattern. From the fail-bit-map analysis, the acceptable mask defect size for opaque and clear defects was found to be 80nm and 120nm, respectively, which could be relaxed from that in ITRS2008. The difference of the acceptable mask defect size for opaque and clear defects comes from the difference of the defect printability at the resist development.

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Section: Experimental Conditionsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%