Mass spectrometry and ab initio calculation of <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si1.gif" overflow="scroll"><mml:mrow><mml:msubsup><mml:mrow><mml:mtext>AsS</mml:mtext></mml:mrow><mml:mrow><mml:mi>n</mml:mi></mml:mrow><mml:mrow><mml:mo>+</mml:mo></mml:mrow></mml:msubsup></mml:mrow></mml:math> (n= 1–7) ion structures

Ramírez-Galicia, Guillermo; Peña‐Méndez, Eladia María; Pangavhane, Sachinkumar Dagurao; Alberti, Milan; Havel, Josef

doi:10.1016/j.poly.2010.02.012

Cited by 15 publications

(6 citation statements)

References 29 publications

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“…Recently, the pulsed laser deposition (PLD) technique has been applied for the fabrication of erbium-doped Ga 5 Ge 20 Sb 10 S 65 thin films. [28] Laser desorption ionization time-of-flight mass spectrometry (LDI-TOF MS) was recently shown to be an effective method for the generation and study of clusters formed by the laser ablation of various solid materials such as nano-diamonds, [29] AgSbS 2 , [30] As-sulphides, [31] P p S q Se r , [32] AsS n + (n = 1-7), [33] α-P 3 N 5 [34] and nano aluminium nitride. [35] TOF MS was also successfully used to analyze chalcogenide glasses such as As-Se or As-S-Se [36,37] ; it was found that this technique was suitable for determining the structural fragments of such solid materials.…”

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Laser desorption ionization time‐of‐flight mass spectrometry of erbium‐doped Ga‐Ge‐Sb‐S glasses

Pangavhane

Němec

Nazabal

et al. 2014

Rapid Comm Mass Spectrometry

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The local structure of Ga-Ge-Sb-S glasses is at least partly different from the structure of species identified in plasma by mass spectrometry, as deduced from Raman scattering spectroscopy analysis; these glasses are mainly formed by [GeS4/2]/[GaS4/2] tetrahedra and [SbS3/2] pyramids. Extended X-ray absorption fine structure measurements show that Er(3+) ions in Ga-Ge-Sb-S glasses are surrounded by 7 sulphur atoms.

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confidence: 99%

Laser desorption ionization time‐of‐flight mass spectrometry of erbium‐doped Ga‐Ge‐Sb‐S glasses

Pangavhane

Němec

Nazabal

et al. 2014

Rapid Comm Mass Spectrometry

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“…It was shown recently that the LA or laser desorption ionization (LDI) time‐of‐flight mass spectrometry (TOF MS) is a powerful tool for the formation of clusters of solid materials and can be used to characterize their structures 21–24. TOF MS was also used successfully to analyze ternary As‐S‐Se glasses including PLD‐produced nano‐layers and it was found that this technique is suitable for the determination of the structural fragments of As‐S‐Se glasses 25.…”

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confidence: 99%

Laser desorption ionization time‐of‐flight mass spectrometric study of binary As‐Se glasses

Pangavhane

Němec

Wágner

et al. 2010

Rapid Comm Mass Spectrometry

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Binary chalcogenide As-Se glasses and their thin films are important for optics, computers, materials science and technological applications. To increase understanding of the properties of thin films fabricated by plasma deposition techniques, more information concerning the physics of plasma plume is needed. In this study the formation of clusters in plasma plume from different As-Se glasses by laser desorption ionization (LDI) or laser ablation (LA) was studied by time-of-flight mass spectrometry (TOF MS) in positive and negative ion modes. Formation of a number of As(p)Se(q) singly charged clusters As(3)Se(q)(+) (q = 1-5), AsSe(q)(-) (q = 1-3), As(2)Se(q)(-) (q = 2-4), and As(3)Se(q)(-) (q = 2-5) was found from As-Se glasses with the molar ratio As:Se in the range from 1:2 to 7:3. The stoichiometry of the As(p)Se(q) clusters was determined via isotopic envelope analysis and computer modeling. The structure of the clusters is proposed and the relationship to the structure of the parent glasses, as also suggested by Raman scattering spectra, is discussed.

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“…On the contrary, these higher ions were detected by Spalta et al 26 who studied thin As 2 S 3 films obtained by PLD. In a later paper 27, the structures of AsS

_{italicn}^{+}

monoarsenic sulfides were calculated using Hartree–Fock and DTF theories. They have showed that small clusters n = 2–4 have minima in cyclic structures, while for higher n = 5–7 structures bicyclic structures show minima.…”

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High‐contrast 2D etched holes array obtained by direct laser writing on chalcogenide As₂S₃ films

Popescu

Săvăstru

Savastru

et al. 2012

Physica Status Solidi (a)

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This paper studies optical, chemical and photoinduced changes in amorphous AsS films, obtained by nanosecond pulsed‐laser ablation of a As40S60 target. The arsenic content of the films is slightly higher than the target composition and depends on the ablation fluence. The photobleaching phenomenon appears after 1–2 min of bandgap laser irradiation. The refractive index diminishes by 0.07 and the transmission approximately doubles. It was established for the first time that films obtained by pulsed laser deposition exhibit a positive resist behavior in amine‐containing etchant. The etching rate of the irradiated film was 0.12 µm/min, while as‐deposited films have lower etching rate. The measured selectivity rate was of 14:1. A 2D high‐quality hole array was produced by direct laser writing and further etching. The unusual behavior can be a result of different glass network formation during the condensation of AsSn molecules sputtered from the bulk target. This is different from the case of thermally evaporated films where AsS1 molecules only were identified in gas‐phase by mass spectrometry.

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Mass spectrometry and ab initio calculation of AsSn+ (n= 1–7) ion structures

Cited by 15 publications

References 29 publications

Laser desorption ionization time‐of‐flight mass spectrometry of erbium‐doped Ga‐Ge‐Sb‐S glasses

Laser desorption ionization time‐of‐flight mass spectrometry of erbium‐doped Ga‐Ge‐Sb‐S glasses

Laser desorption ionization time‐of‐flight mass spectrometric study of binary As‐Se glasses

High‐contrast 2D etched holes array obtained by direct laser writing on chalcogenide As₂S₃ films

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Mass spectrometry and ab initio calculation of AsSn+ (n= 1–7) ion structures

Cited by 15 publications

References 29 publications

Laser desorption ionization time‐of‐flight mass spectrometry of erbium‐doped Ga‐Ge‐Sb‐S glasses

Laser desorption ionization time‐of‐flight mass spectrometry of erbium‐doped Ga‐Ge‐Sb‐S glasses

Laser desorption ionization time‐of‐flight mass spectrometric study of binary As‐Se glasses

High‐contrast 2D etched holes array obtained by direct laser writing on chalcogenide As2S3 films

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High‐contrast 2D etched holes array obtained by direct laser writing on chalcogenide As₂S₃ films