Material design for immersion lithography with high refractive index fluid (HIF)

Miyamatsu, Takashi; Wang, Yong; Suzuki, Motoyuki; Kusumoto, Shiro; Chiba, Takashi; Nakagawa, Hiroki; Hieda, K.; Shimokawa, Tsutomu

doi:10.1117/12.599165

Cited by 23 publications

(15 citation statements)

References 5 publications

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“…Therefore, development of a suitable HIF has become a critical technical issue to address in order to extend ArF immersion technology. At SPIE 2005, a number of organic HIFs were reported [1][2][3] . The optical properties for some of the HIF candidates are very promising, with refractive indices of (>1.6) and transmittance of (>98%/mm).…”

Section: Introductionmentioning

confidence: 99%

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High-refractive-index fluids for the next-generation ArF immersion lithography

et al. 2006

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ArF immersion lithography using a high-refractive-index fluid (HIF) is considered to be a promising candidate for the 32nm node or below. At SPIE 2005 we introduced a new immersion fluid, JSR HIL-1 ¶ , which has a refractive index and transmittance of 1.64 and >98%/mm (193.4nm, 23 o C), respectively [3] . With HIL-1 immersion and a two beam interferometric exposure tool, hp32nm L/S imaging has been demonstrated. In this paper, we will report another novel immersion fluid, HIL-2, which has a transmittance of >99%/mm, which is almost as high as that of water, and a refractive index of 1. 65 (193.4nm, 23 o C). Furthermore, an ArF laser irradiation study has shown that the degree of photodecomposition for both HIL-1 and HIL-2 is small enough for immersion lithography application. A "fluid puddle" defect study confirmed that HILs have less tendency to form immersion-specific photoresist defects and the refractive indices of HILs were found constant under laser irradiation. Batch-to-batch variation in refractive index during manufacture of HILs was not observed. By refining prism designs, hp30nm L/S patterns have also been successfully imaged with two interferometric exposure tools and HIL immersion.

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Section: Introductionmentioning

confidence: 99%

“…At SPIE 2005 we introduced a new immersion fluid, JSR HIL-1 ¶ , which has a refractive index and transmittance of 1.64 and >98%/mm (193.4nm, 23 o C), respectively [3] . With HIL-1 immersion and a two beam interferometric exposure tool, hp32nm L/S imaging has been demonstrated.…”

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High-refractive-index fluids for the next-generation ArF immersion lithography

et al. 2006

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“…1 These results yielded fluids with indices up to about 1.54. 1 Major materials suppliers took the approach of investigating organic-based fluids [2][3][4] . All of these fluids had an index around 1.64 at 193nm.…”

Section: Introductionmentioning

confidence: 99%

Development and evaluation of 193nm immersion generation-three fluid candidates

Zimmerman¹,

Byers²,

Rice³

et al. 2008

Advances in Resist Materials and Processing Technology XXV

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The need to extend 193nm immersion lithography necessitates the development of a third generation (Gen-3) of high refractive index (RI) fluids that will enable approximately 1.7 numerical aperture (NA) imaging. A multipronged approach was taken to develop these materials. One approach investigated the highest-index organic thus far discovered. The second approach used a very high refractive index nanoparticle to make a nanocomposite fluid.This report will describe the chemistry of the best Gen-3 fluid candidates and the systematic approach to their identification and synthesis. Images obtained with the Gen-3 fluid candidates will also be presented for a NA≥ 1.7

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“…Work on third-generation immersion fluids that are compatible with the 32nm node is now being considered. JSR indicates that it, too, is developing secondgeneration fluids (4) .…”

Section: Best Resultsmentioning

confidence: 99%

32nm node technology development using interference immersion lithography

Sewell¹,

McCafferty²,

Markoya³

et al. 2005

SPIE Proceedings

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The 38nm and 32nm lithography nodes are the next major targets for optical lithography on the Semiconductor Industry Roadmap. The recently developed water-based immersion lithography using ArF illumination will be able to provide an optical solution for lithography at the 45nm node, but it will not be able to achieve the 38nm or the 32nm nodes as currently defined. To achieve these next lithographic nodes will require new, very high refractive index fluids to replace the water used in current immersion systems.This paper describes tests and experiments using an interference immersion lithography test jig to develop key technology for the 32nm node.Interference imaging printers have been available for years, and with the advent of Immersion Lithography, they have a new use. Interference immersion image printing offers users a rapid, costeffective way to develop immersion lithography, particularly at extremely high resolutions. Although it can never replace classical lens-based lithography systems for semiconductor device production, it does offer a way to develop resist and fluid technology at a relatively low cost. Its simple image-forming format offers easy access to the basic physics of advanced imaging. Issues such as: Polarization of the image forming light rays; Fluid/resist interaction during exposure; Topcoat film performance; and the Line Edge Roughness (LER) of resists at extremely high resolutions can all be readily studied.Experiments are described and results are provided for work on: 32nm imaging tests; high refractive index fluid testing using 193nm wavelength at resolutions well beyond current lens-based system capabilities; and polarization configuration testing on 45nm, 38nm, and 32nm L/S features. Results on the performance of resists and topcoats are reported for 32nm L/S features.

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Material design for immersion lithography with high refractive index fluid (HIF)

Cited by 23 publications

References 5 publications

High-refractive-index fluids for the next-generation ArF immersion lithography

High-refractive-index fluids for the next-generation ArF immersion lithography

Development and evaluation of 193nm immersion generation-three fluid candidates

32nm node technology development using interference immersion lithography

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