Mechanism of improving forward and reverse blocking voltages in AlGaN/GaN HEMTs by using Schottky drain

Zhao, Shenglei; Mi, Minhan; Hou, Bin; Luo, Jie; Wang, Yi; Dai, Yang; Zhang, Jincheng; Ma, Xiaohua

doi:10.1088/1674-1056/23/10/107303

Cited by 18 publications

(11 citation statements)

References 11 publications

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“…G ALLIUM nitride-based high electron mobility transistors (HEMT's) exhibit superior performance in terms of wider bandgap (varying from 3.4eV to 6.2eV for AlGaN), high-power, high-temperature, high-voltage, and high-frequency applications [1][2][3] due to their sustainable properties such as high mobility (>1500cm 2 /V.s) [4], [5], high saturation velocity, high-thermal conductivity, high breakdown field (∼10 6 Vcm -1 ), and high two-dimensional electron gas (2-DEG) sheet charge density (10 13 cm -2 ) at the hetero-interface [6][7][8] . But, the major drawbacks of HEMT based devices are higher gate leakage current [9] and drain current collapse during operation at higher frequencies.…”

Section: Introductionmentioning

confidence: 99%

Analytical modeling and simulation of lattice-matched Ferro PZT AlGaN/GaN MOSHEMT for high-power and RF/Microwave applications

et al. 2023

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In this paper we have developed an analytical model for Ferro PZT Al 2 O 3 /AlGaN/AlN/GaN MOSHEMT involving the solution of Poisson and Schrödinger equations. This analytical model covers most of the operating regimes of the Ferro PZT MOSHEMT. The two-dimensional electron gas (2-DEG) sheet charge density (n s ), threshold voltage (V th ), drain current (I ds ), gate capacitance (C gs and C gd ), and unit gain cut-off frequency(f T ) model equations are generated and simulated with MATLAB tool. It is also observed that the insertion of the Ferro Pb(Zr, Ti)O 3 PZT (lead zirconium titanate) material can also improve the device performance. The proposed Ferro PZT MOSHEMT model accurately produces a higher drain current of 1.14A/mm , a high transconductance of 362S/mm, the gate-to-source capacitance of 50.99pF, the gate-to-drain capacitance of 38.25pF, and high cut-off frequency of 0.033THz for 20nm AlGaN barrier layer. The proposed model results show good agreement with the TCAD-Atlas simulation results and were satisfactory for the different AlGaN barrier layer thickness. The generated model and simulation results show the potential of using the Ferro PZT MOSHEMT for high-power and RF/Microwave applications.

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Section: Introductionmentioning

confidence: 99%

Analytical modeling and simulation of lattice-matched Ferro PZT AlGaN/GaN MOSHEMT for high-power and RF/Microwave applications

et al. 2023

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“…Usually, a single integrated bidirectional blocking device, instead of using a discrete transistor in series with a discrete Schottky barrier diode (SBD), could achieve high blocking voltages under both forward and reverse drain biases, which can obviously reduce the parasitic elements and further improve the power conversion efficiency. Nowadays, the reverse blocking capability of GaN-based power devices are realized by integrating a SBD at drain electrode [12][13][14][15][16][17][18]. It is vital to reduce the forward turn-on voltage (V on ) caused by SBD because the lower V on is helpful to decrease the on-state power loss and thus to improve the overall power efficiency.…”

Section: Introductionmentioning

confidence: 99%

1.3 kV Reverse-Blocking AlGaN/GaN MISHEMT With Ultralow Turn-On Voltage 0.25 V

Mao

Zhao

et al. 2021

IEEE J. Electron Devices Soc.

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“…A reverse blocking device or circuit must be added to the switching device to achieve unidirectional characteristics, which enlarges the chip size and increases the manufacturing cost. Some studies have reported the unidirectional operation of GaN devices without adding extra components [ 14 , 15 , 16 , 17 , 18 ]. In this study, we proposed a unidirectional switching device that is based on a normally-off p-GaN gate AlGaN/GaN HFET in which a drain electrode consisted of a rectifying gating electrode and an ohmic electrode.…”

Section: Introductionmentioning

confidence: 99%

Unidirectional Operation of p-GaN Gate AlGaN/GaN Heterojunction FET Using Rectifying Drain Electrode

et al. 2021

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In this study, we proposed a rectifying drain electrode that was embedded in a p-GaN gate AlGaN/GaN heterojunction field-effect transistor to achieve the unidirectional switching characteristics, without the need for a separate reverse blocking device or an additional process step. The rectifying drain electrode was implemented while using an embedded p-GaN gating electrode that was placed in front of the ohmic drain electrode. The embedded p-GaN gating electrode and the ohmic drain electrode are electrically shorted to each other. The concept was validated by technology computer aided design (TCAD) simulation along with an equivalent circuit, and the proposed device was demonstrated experimentally. The fabricated device exhibited the unidirectional characteristics successfully, with a threshold voltage of ~2 V, a maximum current density of ~100 mA/mm, and a forward drain turn-on voltage of ~2 V.

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Mechanism of improving forward and reverse blocking voltages in AlGaN/GaN HEMTs by using Schottky drain

Cited by 18 publications

References 11 publications

Analytical modeling and simulation of lattice-matched Ferro PZT AlGaN/GaN MOSHEMT for high-power and RF/Microwave applications

Analytical modeling and simulation of lattice-matched Ferro PZT AlGaN/GaN MOSHEMT for high-power and RF/Microwave applications

1.3 kV Reverse-Blocking AlGaN/GaN MISHEMT With Ultralow Turn-On Voltage 0.25 V

Unidirectional Operation of p-GaN Gate AlGaN/GaN Heterojunction FET Using Rectifying Drain Electrode

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