MEMS Piezoresistive Pressure Sensor Based on Flexible PET Thin-Film for Applications in Gaseous-Environments

Balderrama, Víctor S.; Leon-Gil, J. A.; Fernandez, David A.; Ponce-Hernandez, Juan; Bandala, Manuel

doi:10.1109/jsen.2021.3135543

Cited by 16 publications

(8 citation statements)

References 39 publications

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“…4. При подробном исследовании рельефа поверхности и формы МЭМС-структур и изделий на их основе: акселерометров [22], сенсоров давления [23], адаптивной оптики [24,25] и др. Здесь необходимо анализировать и начальную форму МЭМС, и ее изменение, как под действием ожидаемых функционально необходимых воздействий [25], так и под действием различных разрушающих факторов [26].…”

Section: международный симпозиум "unclassified

Методика Исследования Изменения Формы Пластин И Тонкопленочных Мембран С Использованием Геоморфометрических Подходов

Dedkova¹,

Флоринский²,

Дюжев³

2022

Журнал Технической Физики

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We discuss a technique for investigating changes in complex topography and shape of structures using geomorphometric methods to study surfaces of wafers and membranes formed by the Bosch process. The wafers were analyzed before and after the deposition of the SiO2 layer. The membranes were analyzed during the bulge testing. The study was carried out using maps of the catchment area and principal curvatures taking into account artifacts of the approximation of experimental data. We found a correspondence between the distribution of lines connecting the highest surface areas before and after the deposition of the SiO2 layer on the wafers. For membranes with structure: Al (0.8 μm)/SiO2 (0.6 μm)/Al (1.1 μm), pSi*(0.8 μm)/SiNx (0.13 μm)/SiO2, Al (0.6 μm) – we also found that features of membrane boundaries are mainly caused by their initial shape rather than change under the action of an applied pressure. The advantages of geomorphometry methods for studying changes in the shape of wafers and thin-film membranes in technological processes for the manufacturing of microelectronic devices are shown in comparison with traditional methods for analyzing surface topography maps.

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Section: международный симпозиум "unclassified

Методика Исследования Изменения Формы Пластин И Тонкопленочных Мембран С Использованием Геоморфометрических Подходов

Dedkova¹,

Флоринский²,

Дюжев³

2022

Журнал Технической Физики

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“…This is impossible without a fine analysis of the item topography. It is necessary to analyze both the original form of a MEMS, and its change, under the action of both expected, functionally necessary influences, and various destructive factors (Balderrama et al, 2022; Krysko et al, 2020; Le et al, 2022; Pollock et al, 2017).…”

Section: Introductionmentioning

confidence: 99%

Geomorphometry and microelectronic metrology: Converged realms

Dedkova

Florinsky

2023

Transactions in GIS

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This article discusses the application of geomorphometric methods in microelectronic metrology. Six typical microelectronic items were geomorphometrically analyzed using their digital elevation models with nano‐ and micrometer‐range resolution and elevation difference: (1) a silicon–quartz structure; (2) a mechanically polished silicon wafer; (3) a photovoltaic blend sample; (4) an X‐ray optical element (a fused quartz spherical concave substrate); (5) a Bosch process‐formed, 20 aluminum layered membrane; and (6) a silicon–glass assembly with a volumetric defect. Geomorphometric modeling increases significantly the visibility and informativeness of data presentation, allowing to identify effectively the spatial distribution of nano‐ and microforms of the surface of microelectronic items. Geomorphometric methods provide an opportunity to study the size, location, and characteristic features of nano‐ and microtopographic inhomogeneities of microelectronic items using maps of minimum, maximum, mean, and unsphericity curvatures as well as other morphometric variables.

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“…These sensors use polymer materials for both the substrate and the pressure-sensitive diaphragm. However, the size of this kind of sensors is normally larger than 1 cm × 1 cm and the nonlinearity is about 11% within the full scale of 70 kPa [28], suffering low spatial resolution and low linearity. It is difficult to further reduce the size of the vacuum cavity made of polymer materials, thereby limiting the development of small flexible pressure sensors with the size being smaller than about 200 µm.…”

Section: Introductionmentioning

confidence: 99%

Flexible pressure/temperature sensors with heterogeneous integration of ultra-thin silicon and polymer

Feng,

Li,

Zhang

et al. 2023

J. Micromech. Microeng.

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Flexible pressure sensors and temperature sensors are widely used in various fields because of their advantages in high flexibility, good shape retention and extremely small thickness. However, it is quite challenging to fabricate ultra-thin flexible pressure sensors with reliable sensing performance. In this work, we propose a new type of silicon-polymer heterogeneously integrated MEMS flexible sensor with an ultra-thin silicon-based absolute pressure sensing element and a thermistor. In the study, a flexible MEMS fabrication process is developed, which enables simultaneous fabrication in two different substrates and self-release of the thin and slim flexible sensor. The front-end section of the flexible sensor is with the width as 125 μm, length as 3.2 cm and total thickness as 12 μm, where the integrated silicon substrate thickness is only 3 μm. The sensor takes a slender shape to allow for medical invasive measurement by inserting it into a slim medical catheter or a syringe needle-tube. The sensitivity of the fabricated ultra-thin absolute pressure sensor is tested as 45.2 μV/kPa under 3.3 V supplied voltage, with the nonlinearity as only ±0.16% FS. The sensitivity of the thermistor is 10.4 Ω/°C in the range of 0 °C to 100 °C. Moreover, the polysilicon thermistor can also serve as a micro-heater, where an electric heating power of 107 μW results in a temperature increase of 13.5 °C. With ultra-thin slim structure and satisfactory performance, the MEMS flexible sensor is promising in various fields like biomedical applications.

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MEMS Piezoresistive Pressure Sensor Based on Flexible PET Thin-Film for Applications in Gaseous-Environments

Cited by 16 publications

References 39 publications

Методика Исследования Изменения Формы Пластин И Тонкопленочных Мембран С Использованием Геоморфометрических Подходов

Методика Исследования Изменения Формы Пластин И Тонкопленочных Мембран С Использованием Геоморфометрических Подходов

Geomorphometry and microelectronic metrology: Converged realms

Flexible pressure/temperature sensors with heterogeneous integration of ultra-thin silicon and polymer

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