Mercury (II) Ion Detection Using AgNWs-MoS₂ Nanocomposite on GaN HEMT for IoT-Enabled Smart Water Quality Analysis

A Disposable Electrochemical Biosensor Based on Screen-Printed Carbon Electrodes Modified with Silver Nanowires/HPMC/Chitosan/Urease for the Detection of Mercury (II) in Water

“…Although these methods provide the requisite high accuracy and sensitivity, they are costly and require specialist operation. To overcome these problems, functionalized nanomaterials-based sensors incorporating silver nanoparticles (AgNPs [17]), gold nanoparticles (AuNPs [18]), and silver nanowires (AgNWs [19]) have been developed to provide simple, low-cost, and fast sensing of Hg(II) in real samples. In the same direction, electrochemical biosensors have become very efficient point-of-care (POC) devices that can provide fast and highly accurate analysis, and they are portable, easy to use, and low cost [20].…”

Recent progress on group III nitride nanostructure-based gas sensors

“…95 Likewise, in 2002, they reported the high sensitivity of group III nitride-based gas sensors to nitrogen dioxide (NO 2 ) and the potential use of GaN Schottky diode-based sensors. 3–40 Chung et al 87 demonstrated AlGaN/GaN high-electron mobility transistor (HEMT) sensors for hydrogen gas detection at high temperatures and under exposure to irradiation. This gas sensor was fabricated on AlGaN/GaN with Si as the substrate using platinum (Pt) as the gate electrode material for hydrogen detection in the gate area.…”

“…4 Consequently, the demand for devices for environmental monitoring to ensure occupational health and safety is increasing daily in various industries including processing and manufacturing. 5 One of the key requirements of a sensor for detecting air pollutants is that it should be stable under all hazardous conditions. 6 In this regard, the scientific community and industry have been collaborating to develop various types of sensors for detecting air pollution meeting all the standards.…”

“…Because of the fundamental material features of group III nitrides, the focus of previous research has been on AlGaN/GaN-HEMT applications for high-power, hightemperature, and high-frequency electronic devices. The stacked epitaxial structure of AlGaN/GaN HEMT can be grown via metal organic chemical vapour deposition (MOCVD) or molecular beam epitaxy (MBE) on sapphire, silicon, silicon carbide and GaN substrates based on the final applicability of the device 4,5,33. The AlGaN/GaN HEMT can be transformed into a gas sensor by selecting an appropriate gas-sensitive layer as the gate electrode of the transistor.…”

Nano-functionalized paper-based IoT enabled devices for point-of-care testing: a review

“…It is highly advantageous in fact of simplicity, cost, and portability. It provides many opportunities for point of care detection of human health, food/beverages, agriculture, and the environment (Grudpan et al 2015;Yang et al 2016;Sharma et al 2021). Figure 10 illustrates a systematic operational layout of IoT in POCT devices.…”