Metal-insulator transitions in non-crystalline systems

Mott, N. F.; Kaveh, M.

doi:10.1080/00018738500101771

Cited by 283 publications

(123 citation statements)

References 141 publications

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“…8͑a͒, where ␣ ͑T͒ is plotted versus T −1/2 on a log-linear scale. Mott's law 38 ␣ ͑T͒ = 0 exp͓͑T 0 / T͒ 1/2 ͔ for quasi-onedimensional variable range hopping ͑1D VRH͒ transport in a disordered system holds 39 for each ␣ state. The activation energy T 0 is related to the localization length ͑ ͒ and density of states at the Fermi level ͓N͑E F ͔͒ through T 0 = c / ͓k B N͑E F ͒ ͔ for a quasi-1D system, where c is the proportionality constant and k B is the Boltzmann constant.…”

Section: Temperature Dependence Of Electric Field Effect On Activementioning

confidence: 99%

“…This causes charge carriers to choose a different optimum condition for the next hop. An optimum hop 38 is chosen to be a longer hopping distance for a lower energy difference site around the Fermi level. As a result, the corresponding energy T 0 ͕=1 / ͓N͑E F ͒ ͔͖ required to initiate a farther hop increases in the decrease of N͑E F ͒, assuming a constant for small ͑Q C cell ͒Ј.…”

Section: R Is Found Asmentioning

confidence: 99%

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Electric-field-controlled conductance of “metallic” polymers in a transistor structure

2006

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It was recently reported that use of a doped "metallic" polymer as the active channel in a field effect transistor structure results in unexpected "normally on" transistorlike behavior. We report here the role of ion migration in transistors based on metallic polymer ͓poly͑3,4-ethylenedioxythiophene͒ doped with poly͑styrene sulfonic acid͒ ͑PEDOT:PSS͔͒. The analysis of the ion flow into the active channel due to the gate voltage suggests that for the transistors studied compensating ϳ2 counterions per 100 dopant molecules suppresses PEDOT conductance up to three orders of magnitude. We determine from the temperature dependence of the conductivity of the active channel that the change in conductance of the active channel is throughout the channel in contrast to confinement of gate field induced charge carriers to the channel/dielectric interface in conventional transistors. The decrease of channel conductance reflects an increase of activation energy of carriers. Therefore, we propose that removal of intermediate hopping sites in the disoriented PEDOT:PSS by a small fraction of ion charge compensation causes carriers to anisotropically hop over longer distance leading to a conductor-nonconductor transition.

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Section: Temperature Dependence Of Electric Field Effect On Activementioning

confidence: 99%

Section: R Is Found Asmentioning

confidence: 99%

Electric-field-controlled conductance of “metallic” polymers in a transistor structure

2006

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“…Similar phase separation was also predicted for the Mott-Anderson (metal-insulator) transition in semiconductors, see e.g. [64]. For IITSC systems, Emery et al [65] found that the diluted holes should be unstable against such phase separation.…”

Section: Question Of Coexistencementioning

confidence: 58%

Muon Spin Rotation in High T_cSuperconductors

Golnik

1993

Acta Phys. Pol. A

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“…Thus, the experimental behaviour is well fitted by the expression s(T) = s 0 Áexp[À(T 0 /T) n ], with n = 1/4. The VRH model of conductivity represents a phonon-assisted mechanism of charge transport and it is normally associated with amorphous semiconductors, semiconductor glasses 51,52 and more recently with amorphous carbon. 17 …”

Section: Resultsmentioning

confidence: 99%

CVD synthesis of carbon spheres using NiFe-LDHs as catalytic precursors: structural, electrochemical and magnetoresistive properties

et al. 2016

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The gram-scale synthesis of carbon spheres with a diameter of ca. 740 nm has been achieved by means of a chemical vapour deposition method using NiFe-layered double hydroxides as a solid catalytic precursor. The presence of the catalyst (FeNi 3 ) allows controlling the final size distribution, resulting in a monodisperse sample. Their structural properties exhibited a high degree of graphitization according to their I D /I G ratio. In addition, their morphological features were unveiled by FIB-SEM and HRTEM, showing that they are formed by solid inner cores, and presenting labile chain-like structures due to accretion procedures. The solution and posterior sonication of the samples in toluene gave rise to the well-defined isolated spheres. The textural and electrochemical properties of the spheres have been tested showing non-mesoporous structures with a good behaviour as electrode materials for supercapacitors due to the presence of redox functionalities on their surface. Finally, magneto-transport measurements have been carried out, demonstrating semiconductor behaviour, as well as a positive magnetoresistance effect (ca. 72%) for the lowest studied temperature (2 K).

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Metal-insulator transitions in non-crystalline systems

Cited by 283 publications

References 141 publications

Electric-field-controlled conductance of “metallic” polymers in a transistor structure

Electric-field-controlled conductance of “metallic” polymers in a transistor structure

Muon Spin Rotation in High T_cSuperconductors

CVD synthesis of carbon spheres using NiFe-LDHs as catalytic precursors: structural, electrochemical and magnetoresistive properties

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Metal-insulator transitions in non-crystalline systems

Cited by 283 publications

References 141 publications

Electric-field-controlled conductance of “metallic” polymers in a transistor structure

Electric-field-controlled conductance of “metallic” polymers in a transistor structure

Muon Spin Rotation in High TcSuperconductors

CVD synthesis of carbon spheres using NiFe-LDHs as catalytic precursors: structural, electrochemical and magnetoresistive properties

Contact Info

Product

Resources

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Muon Spin Rotation in High T_cSuperconductors