Metal-organic chemical vapor deposition of aluminium oxynitride from propylamine–dimethylaluminium hydride and oxygen: growth mode dependence and performance optimization

He, Gang; Sun, Zhaoqi; Shi, Shiwei; Chen, Xiaoshuang; Lv, Jianguo; Zhang, Lide

doi:10.1039/c2jm16747f

Cited by 8 publications

(13 citation statements)

References 38 publications

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“…Moreover, the existence of the N−Al−O bond confirms the formation of ternary compound of AlO x N y in the AlON sample. 4,5 It reveals that the prepared AlON sample is not a "mixture" of AlN and Al 2 O 3 . Normally, the ALD growth of ternary compound is realized by alternately growing two kinds of binary compounds.…”

Section: Resultsmentioning

confidence: 91%

“…The obtained surface roughness used from XRR and AFM are shown in Figure 2b, which is crucial for the electrical properties of the devices. 5 The corresponding AFM mapping images of the AlN, AlON, and Al 2 O 3 films with 200 ALD cycles are shown in Figure 3. It is found that the surface roughness of all the films prepared in this work is less than 0.8 nm.…”

Section: Resultsmentioning

confidence: 99%

“…Fortunately, this obstacle can be conquered by replacing the growth method with chemical vapor deposition (CVD). 3,5 The chemical solution deposition is also an option. 4 But this coating technology is not commonly used by the industry.…”

Section: Introductionmentioning

confidence: 99%

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Low-Temperature One-Step Growth of AlON Thin Films with Homogenous Nitrogen-Doping Profile by Plasma-Enhanced Atomic Layer Deposition

Chen

et al. 2017

ACS Appl. Mater. Interfaces

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The AlON film with homogeneous nitrogen-doping profile was grown by plasma-enhanced atomic layer deposition (PEALD) at low temperature. In this work, the precursors of the NH and the O were simultaneously introduced into the chamber during the PEALD growth at a relatively low temperature of 185 °C. It is found that the composition of the obtained film quickly changes from AlN to AlO when a small amount of O is added. Thus, the NH:O ratio should be maintained at a relatively high level (>85%) for realizing the AlON growth. Benefited from the growth method, the nitrogen can be doped evenly in the entire film. Moreover, the AlON films exhibit a lower surface roughness than the AlN as well as the AlO ones. The Al 2p and N 1s X-ray photoelectron spectra show that the AlON film is composed of Al-N, Al-O, and N-Al-O bonds. Moreover, a three-layer construction of the AlON film is proposed through the Si 2p spectra analysis and reconfirmed by the transmission electron microscopy characterization. At last, the electrical and optical tests indicate that the AlON films prepared in this work can be employed as the gate dielectric in transistor application as well as the antireflection layer in photovoltaic application.

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Section: Resultsmentioning

confidence: 91%

Section: Resultsmentioning

confidence: 99%

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Low-Temperature One-Step Growth of AlON Thin Films with Homogenous Nitrogen-Doping Profile by Plasma-Enhanced Atomic Layer Deposition

Chen

et al. 2017

ACS Appl. Mater. Interfaces

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“…Nitrides (AlN, GaN, TaN, and InN) have attracted great attention on the fabrication of optoelectronic devices due to their appropriate band gap that can absorb or emit wavelength from the UV to the IR. − Oxynitrides are another group of materials with intrinsic and technological importance that are supposed to inherit or even surpass the advantages of both oxides and nitrides. Oxynitrides have played an important role in fields including passivation, high-k, and photovoltaics . Better application prospect is deserved if additional new oxynitrides are fabricated and their new novel features are found …”

Section: Introductionmentioning

confidence: 99%

“…4−7 Oxynitrides are another group of materials with intrinsic and technological importance that are supposed to inherit or even surpass the advantages of both oxides and nitrides. Oxynitrides have played an important role in fields including passivation, 8 high-k, 9 and photovoltaics. 10 Better application prospect is deserved if additional new oxynitrides are fabricated and their new novel features are found.…”

Section: Introductionmentioning

confidence: 99%

Composition and Properties Control Growth of High-Quality GaO_xN_y Film by One-Step Plasma-Enhanced Atomic Layer Deposition

Yang

et al. 2019

Chem. Mater.

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This study provided a novel method for depositing high-quality GaO x N y film by plasma-enhanced atomic layer deposition (ALD). To obtain a uniform nitrogen and oxygen composition, O2 and NH3 were led into the ALD chamber at the same time. It was found that the growth rate, composition, and optical properties of the GaO x N y film could be precisely controlled by adjusting the O2:NH3 ratio. The energy band gap was well tuned from 3.46 to 4.78 eV with increased O2 ratios. The detailed analysis of the X-ray photoelectron spectra proved the existence of Ga–O, Ga–N, and N–Ga–O bonds in prepared GaO x N y film. The surface, interface, and construction of the GaO x N y films were different with GaN and Ga2O3 films through transmission electron microscope characterization. Then a possible growth mechanism was demonstrated based on these findings. The energy band structure of all GaO x N y films deposited in this study was obtained from a detailed analysis of the valence band spectra. Importantly, the GaO x N y was found to exhibit lower leakage current and higher breakdown voltage than both GaN and Ga2O3. These findings offered a foundation and proved this material will present brilliant application prospects in photodetection, photoelectrochemical water splitting, and high-voltage devices.

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Interface quality modulation, band alignment modification and optimization of electrical properties of HfGdO/Ge gate stacks by nitrogen incorporation

Gao

Fang

et al. 2017

Journal of Alloys and Compounds

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Metal-organic chemical vapor deposition of aluminium oxynitride from propylamine–dimethylaluminium hydride and oxygen: growth mode dependence and performance optimization

Cited by 8 publications

References 38 publications

Low-Temperature One-Step Growth of AlON Thin Films with Homogenous Nitrogen-Doping Profile by Plasma-Enhanced Atomic Layer Deposition

Low-Temperature One-Step Growth of AlON Thin Films with Homogenous Nitrogen-Doping Profile by Plasma-Enhanced Atomic Layer Deposition

Composition and Properties Control Growth of High-Quality GaO_xN_y Film by One-Step Plasma-Enhanced Atomic Layer Deposition

Interface quality modulation, band alignment modification and optimization of electrical properties of HfGdO/Ge gate stacks by nitrogen incorporation

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Metal-organic chemical vapor deposition of aluminium oxynitride from propylamine–dimethylaluminium hydride and oxygen: growth mode dependence and performance optimization

Cited by 8 publications

References 38 publications

Low-Temperature One-Step Growth of AlON Thin Films with Homogenous Nitrogen-Doping Profile by Plasma-Enhanced Atomic Layer Deposition

Low-Temperature One-Step Growth of AlON Thin Films with Homogenous Nitrogen-Doping Profile by Plasma-Enhanced Atomic Layer Deposition

Composition and Properties Control Growth of High-Quality GaOxNy Film by One-Step Plasma-Enhanced Atomic Layer Deposition

Interface quality modulation, band alignment modification and optimization of electrical properties of HfGdO/Ge gate stacks by nitrogen incorporation

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Composition and Properties Control Growth of High-Quality GaO_xN_y Film by One-Step Plasma-Enhanced Atomic Layer Deposition