Metastabilities in the electrical characteristics of Au‐CdMnTe Schottky contacts

Abstract

Schottky Au-Cd 0.99 Mn 0.01 Te:Ga contacts were studied by the use of the capacitance -voltage measurements and thermally stimulated capacitance technique. Capacitance was recorded within 77 K-400 K temperature range. Persistent photocapacitance was observed at temperatures as high as 260 K. Obtained results can be explained assuming the presence of DX centers in the semiconductor and the interface states at the metal-semiconductor interfacial layer. The low temperature photocapacitance has been attributed to the presence of DX centers whereas that observed at higher temperatures has been linked with the interface states. The presence of the interface states has been confirmed by the thermally stimulated capacitance studies performed at various reverse biases.