Method for Determination of Characteristics of Sensors Based on Electroconducting Polymers

Abstract

IMPROVED HYDROGEN DETECTION OF ISLAND TYPE PALLADIUM FILM -NANOPOROUS SILICON DIODE AT ROOM TEMPERATURE V. A. Skryshevsky, V. Polischuk, A. I. Manilov, I. V. Gavrilchenko, R. V. SkryshevskyAn island type palladium film -silicon diode hydrogen sensor has been developed applying thin (15-75 nm) nanoporous silicon as an intermediate sensitive layer. Using a thermal Pd deposition into porous silicon allows to vary the size and morphology of the metal islands in the porous silicon matrix. The gas sensor behaviour under hydrogen exposure in mixture of 200 ppm-10% H 2 and dry synthetic (20%O 2 +80 %N 2 ) air was investigated by measuring the I-V characteristics. The diode current and sensor hydrogen sensitivity is shown to depend on the type of silicon substrate and the thickness of porous silicon. The current change versus hydrogen concentrations shows the linear law both for large and small hydrogen concentrations. At room temperature the sensor sensitivity is approximately 1 μA/100ppm, the response and recovery times lies in 1-8 min range. Ðîçðîáëåíî ñåíñîð âîäíþ íà îñíîâ³ ñòðóêòóðè îñòð³âêîâà ïë³âêà ïàëëàä³þ -êðåìí³ºâèé ä³îä, âèêîðèñòîâóþ÷è òîíêèé (15-75 íì) øàð íàíîïîðèñòîãî êðåìí³þ â ÿêîñò³ ïðîì³aeíîãî ÷óòëèâîãî øàðó. Âèêîðèñòàííÿ òåðì³÷íîãî îñàäaeåííÿ ïàëëàä³þ â ïîðóâàòèé êðåìí³é äîçâî-ëÿº çì³íþâàòè ðîçì³ð òà ìîðôîëîã³þ ìåòàëåâèõ îñòðîâê³â â ìàòðèö³ ïîðóâàòîãî êðåìí³þ. Ïîâåä³íêà ãàçîâîãî ñåíñîðà ïðè åêñïîçèö³¿ âîäíþ â ñóì³ø³ 200 ppm-10 % H 2 òà ñóõîãî ñèíòå-òè÷íîãî ïîâ³òðÿ (20 % O 2 + 80 % N 2 ) áóëà äîñë³äaeåíà øëÿõîì âèì³ð³â âîëüò-àìïåðíèõ õàðàê-òåðèñòèê. ijîäíèé ñòðóì ³ ÷óòëèâ³ñòü ñåíñîðó âîäíþ çàëåaeàòü â³ä òèïó êðåìí³ºâî¿ ï³äêëàäêè ³ òîâùèíè ïîðóâàòîãî êðåìí³þ. Çì³íà ñòðóìó â³ä êîíöåíòðàö³¿ âîäíþ ïîêàçóº ë³í³éíó çàëå-V. A. Skryshevsky, V. Polischuk, A. I. Manilov, I. V. Gavrilchenko, R. V. Skryshevsky