Mg-Doped CdTeO3 Quantum Dot Sensitized Solar Cells

Abstract

Abstract.To study the influence of doping on p-type solar cells, we use the p-type NiO/CdTeO 3 structure to fabricate Mg-doped CdTeO 3 quantum dot-sensitized solar cells (QDSSCs), by doping CdTeO 3 -sensitized NiO photocathode with dopant element Mg. When the doping ratio of Mg is 1:30 and the successive ionic layer adsorption and reaction (SILAR) cycles are 2, we get the short-circuit current density of 0.387 mA/cm 2 , which is obviously higher than that (0.348 mA/cm 2 ) of the undoped ones. Here in this report, we emphatically analyzed the effect of doping ratio and SILAR cycles on the properties of QDSSCs. And it is an important attempt on the development of p-type NiO/CdTeO 3 QDSSCs.