Microchip‐sized InSb photodiode infrared sensors operating at room temperature

Kuze, Naohiro; Camargo, Edson Gomes; Ueno, K.; Kawakami, Yoshifumi; Moriyasu, Yoshitaka; Nagase, Kazuhiro; Satō, Masayuki; Endo, H.; Ishibashi, K.; Ozaki, Masaru

doi:10.1002/pssc.200564154

Cited by 21 publications

(14 citation statements)

References 4 publications

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“…To avoid 1/f noise, we operated our InSb photodiode in photovoltaic (zero bias) mode to output an open-circuit voltage. We found not only an increase in resistance at zero bias but also that the photocurrent was higher when an AlInSb barrier layer was inserted [6,7]. We then optimised the Al composition and the thickness of the AlInSb barrier layer [8].…”

Section: Introductionmentioning

confidence: 94%

Miniaturized InSb mid‐IR photovoltaic sensor for room temperature operation

Ueno

Camargo

Morishita

et al. 2008

Phys. Status Solidi (c)

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We have developed a miniaturized InSb middle‐infrared photovoltaic sensor (InSb PVS) that operates at room temperature. A single InSb photodiode of the InSb PVS consists of an InSb p+‐p–‐n+ photodiode structure grown on a semi‐insulating GaAs (100) substrate, with a p+‐Al0.17In 0.83 Sb barrier layer between p+ and p– layers to reduce diffusion of photo‐excited electrons. The n‐ and p‐type dopants used are Sn and Zn, respectively. To avoid 1/f noise, we operated our InSb photodiode in photovoltaic mode to output an open‐circuit voltage. Moreover, to improve the signal‐to‐noise ratio, 700 photodiodes arranged on a 600 × 600 μm chip were serially connected to each other. We found that the output signal voltage of the sensor depends on the Zn doping concentration in the p– layer. The peak output voltage was obtained at about 6 × 1016 cm–3, which corresponded to the minimum value of the carrier concentration in the p– layer. After packaging, the final external size of the sensor was 2.2 × 2.7 × 0.7 mm. To our knowledge, our sensor is the smallest uncooled sensor in the mid‐IR range reported up to now. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Introductionmentioning

confidence: 94%

Miniaturized InSb mid‐IR photovoltaic sensor for room temperature operation

Ueno

Camargo

Morishita

et al. 2008

Phys. Status Solidi (c)

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“…(9)(10) This result is supposed to be mainly due to the decrease in the rate of current diffusion to the p-InSb layer of excited electrons in the conduction band, which also increases the resistance under near-zero bias condition. Figure 2 shows the dark I-V curve of a photodiode with 9 × 9 μm 2 junction area measured at a temperature of 300 K. Note the good rectifying characteristics even at room temperature.…”

Section: Sensor Structurementioning

confidence: 99%

Nondispersive Infrared Gas Sensor Using InSb-Based Photovoltaic-Type Infrared Sensor

2014

Sensors and Materials

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We have developed an uncooled InSb-based infrared sensor with small features, high sensitivity, fast response, and spectral response ranging from 2 to 7 μm. A miniaturized nondispersive infrared (NDIR) gas sensor module was also implemented and tested. Gas concentration measurements were performed, showing that the sensor can detect several gases, such as CO 2 , CO, and NO x , which have absorption peaks at the wavelength response range of the detector. In this work, a fully digital CO 2 meter was implemented, showing that our detector allows fast response measurements implementable in small modules.

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“…We found not only an increase in the resistance at zero bias but also a higher photocurrent when an AlInSb barrier layer was inserted [6,7]. In addition, to improve the signal-to-noise (S/N) ratio, several photodiode elements were serially connected to one another on the substrate.…”

Section: Introductionmentioning

confidence: 98%