Microstructural and Reliability Issues of TSV

Kumar, Praveen; Dutta, I.; Huang, Zhiheng; Conway, Paul

doi:10.1007/978-3-319-44586-1_4

Cited by 7 publications

(1 citation statement)

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“…Modeling TSV structures and simulating them in the time domain is one of the most critical issues in this field. Thus, future research should focus on developing more accurate and efficient modeling and simulation techniques to address the challenges posed by TSV coupling in 3D IC design [71,72].…”

Section: Noise Couplingmentioning

confidence: 99%

A Short Review of Through-Silicon via (TSV) Interconnects: Metrology and Analysis

Wang

Duan

et al. 2023

Applied Sciences

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This review investigates the measurement methods employed to assess the geometry and electrical properties of through-silicon vias (TSVs) and examines the reliability issues associated with TSVs in 3D integrated circuits (ICs). Presently, measurements of TSVs primarily focus on their geometry, filling defects, and the integrity of the insulating dielectric liner. Non-destructive measurement techniques for TSV contours and copper fillings have emerged as a significant area of research. This review discusses the non-destructive measurement of contours using high-frequency signal analysis methods, which aid in determining the stress distribution and reliability risks of TSVs. Additionally, a non-destructive thermal detection method is presented for identifying copper fillings in TSVs. This method exploits the distinct external characteristics exhibited by intact and defective TSVs under thermoelectric coupling excitation. The reliability risks associated with TSVs in service primarily arise from copper contamination, thermal fields in 3D-ICs, stress fields, noise coupling between TSVs, and the interactions among multiple physical fields. These reliability risks impose stringent requirements on the design of 3D-ICs featuring TSVs. It is necessary to electrically characterize the influence of copper contamination resulting from the TSV filling process on the reliability of 3D-ICs over time. Furthermore, the assessment of stress distribution in TSVs necessitates a combination of micro-Raman spectroscopy and finite element simulations. To mitigate cross-coupling effects between TSVs, the insertion of a shield between them is proposed. For efficient optimization of shield placement at the chip level, the geometric model of TSV cross-coupling requires continuous refinement for finite element calculations. Numerical simulations based on finite element methods, artificial intelligence, and machine learning have been applied in this field. Nonetheless, comprehensive design tools and methods in this domain are still lacking. Moreover, the increasing integration of 3D-ICs poses challenges to the manufacturing process of TSVs.

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Section: Noise Couplingmentioning

confidence: 99%