2015
DOI: 10.1016/j.ijrmhm.2015.03.014
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Microstructural development and mechanical properties of hot pressed SiC reinforced TiB2 based composite

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Cited by 132 publications
(13 citation statements)
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“…The most likely explanation for justifying the presence of observed surface voids is that a certain amount of small TiB2 grains was removed during the polishing step. The latter statement is in agreement with the motivation recently provided by Sabahi Namini et al ( 2015) [67] to explain the presence of pores on the surface of highly dense SiC-reinforced TiB2 samples produced by hot-pressing.…”
Section: Sintering Optimization and Microstructure Of Dense Samplessupporting
confidence: 93%
“…The most likely explanation for justifying the presence of observed surface voids is that a certain amount of small TiB2 grains was removed during the polishing step. The latter statement is in agreement with the motivation recently provided by Sabahi Namini et al ( 2015) [67] to explain the presence of pores on the surface of highly dense SiC-reinforced TiB2 samples produced by hot-pressing.…”
Section: Sintering Optimization and Microstructure Of Dense Samplessupporting
confidence: 93%
“…120 Other than pure TiB 2 material and TiB 2 coatings, TiB 2 -based composites have been studied extensively at the laboratory and pilot scale. Namini et al 121 investigated the mechanical properties of TiB 2 -SiC composite with different SiC compositions between 15 to 30 wt%. The relative density of the TiB 2 -SiC composite increased with SiC concentration, while the porosity of the specimen was zero when SiC concentration in the cathode was 30 wt%.…”
Section: Tib 2 Based Cathodesmentioning
confidence: 99%
“…EDS analysis of the elements on the surface of the B 4 C-SiC-TiB 2 ceramic composites shows a dark continuous phase of B 4 C, with little or no elemental content of Mg and Al, which are enriched at the triple grain junctions of the specimen. SiC and TiB 2 are the main added phases in the composites, the sintering temperatures (SiC: 1600-1800 • C, 34,35 TiB 2 : 1500-1900 • C [36][37][38] ) of the two compounds are relatively low compared to B 4 C. Thus, the grains of SiC and TiB 2 have started to grow under the sintering conditions at 1900 • C, resulting in larger SiC particles and TiB 2 particles observed in the BSE images on the surface of the specimens (Figure 16).…”
Section: 23mentioning
confidence: 99%