Microstructural evolution, swelling and hardening of CVD-SiC induced by He ions irradiation at 650 °C

Liu, Min; Yan, Yubin; Zhu, Zhenbo; Liu, Renduo; Ye, Linfeng; Zhou, Haijun; Huang, Hefei

doi:10.1016/j.ceramint.2022.09.152

Cited by 14 publications

(4 citation statements)

References 46 publications

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“…In high-temperature fission nuclear reactors, SiC is the main barrier of fission products in the coated TRISO fuel particles will be exposed to different irradiation from different fission products in the presence of He from nuclei decay and transmutation at elevated temperature. He is known to form bubbles in SiC (Gavarini et al, 2020;Liu et al, 2022). These bubbles might compromise SiC as the main barrier to fission products.…”

Section: Experimental Methodsmentioning

confidence: 99%

“…Helium is insoluble in SiC and forms bubbles when irradiated into SiC with fluences between 5 × 10 16 and 1 × 10 17 ions/cm 2 (Gavarini et al, 2020;Liu et al, 2022). The formation of bubbles in SiC results in surface swelling, blistering, and exfoliation (Butterworth, 1989;Grisolia et al, 2000;Zhang et al, 2003;Hinks et al, 2011;Linez et al, 2013;Barcz et al, 2014;Li et al, 2014;Terrani et al, 2014;Li et al, 2015;Linez et al, 2015;Chen et al, 2016;Sun et al, 2018;Daghbouj et al, 2020;Gavarini et al, 2020;Zhang et al, 2021;Clay et al, 2022;Li et al, 2022;Liu et al, 2022;Mokgadi et al, 2022), which affect the structural integrity of SiC as the main barrier to FPs. Thus, it is crucial to study the microstructure of SiC due to the presence of FPs and He and its effect on the migration behaviour of fission products in SiC.…”

Section: Introductionmentioning

confidence: 99%

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The influence of helium-induced defects on the migration of strontium implanted into SiC above critical amorphization temperature

Mokgadi,

Abdalla,

Madhuku

et al. 2023

Front. Mater.

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The presence of radiation-induced defects and the high temperature of implantation are breeding grounds for helium (He) to accumulate and form He-induced defects (bubbles, blisters, craters, and cavities) in silicon carbide (SiC). In this work, the influence of He-induced defects on the migration of strontium (Sr) implanted into SiC was investigated. Sr-ions of 360 keV were implanted into polycrystalline SiC to a fluence of 2 × 1016 Sr-ions/cm2 at 600°C (Sr-SiC). Some of the Sr-SiC samples were then co-implanted with He-ions of 21.5 keV to a fluence of 1 × 1017 He-ions/cm2 at 350°C (Sr + He-SiC). The Sr-SiC and Sr + He-SiC samples were annealed for 5 h at 1,000°C. The as-implanted and annealed samples were characterized by Raman spectroscopy, scanning electron microscopy (SEM), atomic force microscopy (AFM), transmission electron microscopy (TEM), and Rutherford backscattered spectrometry (RBS). Implantation of Sr retained some defects in SiC, while co-implantation of He resulted in the formation of He-bubbles, blisters, and craters (exfoliated blisters). Blisters close to the critical height and size were the first to exfoliate after annealing. He-bubbles grew larger after annealing owing to the capture of more vacancies. In the co-implanted samples, Sr was located in three regions: the crystalline region (near the surface), the bubble region (where the projected range of Sr was located), and the damage region toward the bulk. Annealing the Sr + He-SiC caused the migration of Sr towards the bulk, while no migration was observed in the Sr-SiC samples. The migration was governed by “vacancy migration driven by strain fileds.”

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Section: Experimental Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

The influence of helium-induced defects on the migration of strontium implanted into SiC above critical amorphization temperature

Mokgadi,

Abdalla,

Madhuku

et al. 2023

Front. Mater.

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“…1). The He bubbles were examined by through-focus experiment, which appears as white defects with black fringe in the under-focus mode and turns into black defects with white fringe in the over-focus mode [18]. The selected area electron diffraction (SAED) patterns taken from the irradiated regions were displayed in the insets of Figs.…”

Section: Calculation Detailsmentioning

confidence: 99%

“…Under neutron irradiation of 14.1 MeV, He and Mg atoms of high concentrations will be generated in SiC by nuclear transmutation reaction [11]. He has very low solubility in the nuclear ceramics [12][13][14][15] and can be trapped by vacancies to form bubbles at different irradiation temperatures [16][17][18], causing swelling, hardening, and fracture of SiC-based materials [19,20]. It should be noted that the formation of the He bubbles on the surface could cause the blisters of SiC [21][22][23].…”

Section: Introduction mentioning

confidence: 99%

Repelling effects of Mg on diffusion of He atoms towards surface in SiC: Irradiation and annealing experiments combined with first-principles calculations

Liu,

Li,

Hui

et al. 2023

Journal of Advanced Ceramics

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In this study, the effects of Mg on the formation of He bubbles and diffusion behavior of He atoms in cubic silicon carbide (3C-SiC) were investigated by irradiation and annealing experiments as well as first-principles calculations. TEM results indicated that two damage bands were formed in He&Mg irradiated SiC. During annealing, Mg could prevent He atoms from diffusing to the surface, resulting in the formation of the He bubbles in the deeper areas far from Mg-implanted regions, which is helpful in avoiding surface blisters. First-principles calculations were then performed to explore the effects of Mg on the He behavior in SiC. The solution energy, binding energy charge density, bond length, and crystal orbital Hamiltonian population of these elements were calculated to identify their states. The results suggested that the binding capacity between He and Mg was weak, and Mg could increase the diffusion energy barrier of He. Ab initio molecular dynamics (AIMD) simulation showed that Mg could make He in a high-energy unstable state, and force He atom to move toward the vacancy away from Mg, which explains the experimental results.

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Evolution of microstructure and mechanical properties of SiCf/SiC composites induced by He ions irradiation at various temperatures

Li,

Zhu

et al. 2023

Ceramics International

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Microstructural evolution, swelling and hardening of CVD-SiC induced by He ions irradiation at 650 °C

Cited by 14 publications

References 46 publications

The influence of helium-induced defects on the migration of strontium implanted into SiC above critical amorphization temperature

The influence of helium-induced defects on the migration of strontium implanted into SiC above critical amorphization temperature

Repelling effects of Mg on diffusion of He atoms towards surface in SiC: Irradiation and annealing experiments combined with first-principles calculations

Evolution of microstructure and mechanical properties of SiCf/SiC composites induced by He ions irradiation at various temperatures

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