Microstructure and electrical properties of magnetic tunneling junctions: Ta/NiFe/IrMn/M/Al-oxide/M/NiFe (M=Co, NiFe, CoFe)

Microstructure and tunneling magnetoresistance with spin switching in the Co/AlOx/CoFeB cross-strip junctions

“…In order to study our Co/AlO x /CoFeB quality, the MTJ-based systems were studied in Table 1 [19][20][21][22][23][24][25][26]. In particular, the Co/Al 2 O 3 /CoFe junction of Ref.…”

Enhancement of tunneling magnetoresistance by optimization of capping layer thicknesses in CoFeB/MgO/CoFeB magnetic tunnel junctions

“…2 The focus of the optimization effort has been mostly on the choice of materials for magnetic layers and oxide barrier. 3,4 Oxide barrier materials ͑such as aluminum oxide, 5 magnesium oxide, 6 titanium oxide, 7 tantalum oxide, 8 and strontium titanium oxide 9 ͒ and magnetic layer compositions 4,10,11 are the common considerations for optimizing the TMR. However, the structural geometry is also found to be influential to the performance of MTJ devices.…”

The exchange-biasing in the Si(100)/Ta/Co/IrMn/Ta system

“…We conclude that the IrMn (1 1 1) structure is an important factor in governing the exchange-biasing field. rThe exchange-biasing phenomenon has been extensively investigated in Co/IrMn systems because of the spin-valve type read heads and magnetoresistance-random-access-memories (MRAMs) application [1][2][3]. It is well known that the exchange-coupling interaction existing near the ferromagnetic(FM)/antiferromagnetic(AFM) interface may cause a unidirectional shift in the magnetic hysteresis loop.…”