Microstructure and electron field emission study of diamond nanorod decorated a-SiO2 nanowires by microwave Ar–CH4/H2 plasma chemical vapor deposition with addition of N2

Singh, Manoj K.; Titus, Elby; Willinger, Marc Georg; Madaleno, J. C.; Grácioa, J.

doi:10.1016/j.diamond.2009.02.021

Cited by 7 publications

(10 citation statements)

References 18 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Afterward, many others reported successful the coating of microdiamond onto a variety of substrate wires including silicon carbide, copper, [66][67][68]. The as-prepared diamond nanowires showed good electron field emission properties [67,68]. Furthermore, our group also reported a Si nanowires-templated hot filament chemical vapor deposition method for fabrication boron-doped diamond nanowires arrays and 2D diamond nanowires network [69,70].…”

Section: Nanowires-templated Cvd For Diamond Nanowiresmentioning

confidence: 88%

“…The possibility of deposition of layered microdiamond coatings onto tungsten wires by the CVD method was demonstrated for the first time by May et al [62]. Afterward, many others reported successful the coating of microdiamond onto a variety of substrate wires including silicon carbide, copper, [66][67][68]. The as-prepared diamond nanowires showed good electron field emission properties [67,68].…”

Section: Nanowires-templated Cvd For Diamond Nanowiresmentioning

confidence: 95%

See 1 more Smart Citation

Diamond Nanowires: Fabrication, Structure, Properties and Applications

Zhi

2014

Topics in Applied Physics

View full text Add to dashboard Cite

Diamond is a wide band gap semiconductor exhibiting a combination of superior properties, such as negative electron affinity, chemical inertness, high Young's modulus, the highest hardness and room-temperature thermal conductivity, etc. It is possible to control and enhance the fundamental properties of diamond by fabricating 1D diamond nanowires, due to the giant surface-to-volume ratio enhancements of 1D nanowires. Although theoretical comparisons with carbon nanotubes have shown that diamond nanowires are energetically and mechanically viable structures, reproducibly synthesizing the crystalline diamond nanowires has remained challenging. In this chapter, we present a comprehensive, up-to-date review for the diamond nanowires, wherein we will give a discussing for their synthesis along with their structures, properties and applications.

show abstract

Section: Nanowires-templated Cvd For Diamond Nanowiresmentioning

confidence: 88%

Section: Nanowires-templated Cvd For Diamond Nanowiresmentioning

confidence: 95%

Diamond Nanowires: Fabrication, Structure, Properties and Applications

Zhi

2014

Topics in Applied Physics

View full text Add to dashboard Cite

show abstract

“…[85][86][87][88] Gasphase-Flüssigkeit-Feststoff-Verfahren und konformes Überziehen der Nanofasern mit 15-20 nm großen nanokristallinen Diamantkçrnern (NCD) durch Mikrowellenplasma-verstärkte chemische Gasphasenabscheidung unter wasserstoffarmen Bedingungen. [93][94][95] Die erhaltenen Diamant-Nanodrähte zeigten gute Elektronen-Feldemissionseigenschaften. [94,95] Unsere Arbeitsgruppe beschrieb ein Verfahren der chemischen Heißfilament-Gasphasenabscheidung mit Si-Nanodrahttemplaten zum Herstellen Bordotierter Diamant-Nanodrahtfelder und 2D-Diamant-Nanodrahtnetzwerke.…”

Section: Templatgestütztes Cvd-verfahrenunclassified

“…[93][94][95] Die erhaltenen Diamant-Nanodrähte zeigten gute Elektronen-Feldemissionseigenschaften. [94,95] Unsere Arbeitsgruppe beschrieb ein Verfahren der chemischen Heißfilament-Gasphasenabscheidung mit Si-Nanodrahttemplaten zum Herstellen Bordotierter Diamant-Nanodrahtfelder und 2D-Diamant-Nanodrahtnetzwerke. [96,97] Das Syntheseverfahren von Bor-dotierten Diamant-Nanodrahtfeldern wird in Abbildung 6 dargestellt.…”

Section: Templatgestütztes Cvd-verfahrenunclassified

Diamant‐Nanodrähte: Herstellung, Struktur, Eigenschaften und Anwendungen

Yu¹,

Wu²,

Zhi³

2014

Angewandte Chemie

View full text Add to dashboard Cite

Nanodrähte aus sp3‐C‐C‐gebundenem Diamant sind Halbleiter mit einer breiten Bandlücke und einer Kombination ausgezeichneter Eigenschaften wie einer negativen Elektronenaffinität, chemischer Inertheit, einem hohen Elastizitätsmodul, höchster Härte und höchster thermischer Leitfähigkeit bei Raumtemperatur. Über die Herstellung von 1D‐Diamant‐Nanodrähten können die zentralen Eigenschaften von Diamant durch Erhöhen des Verhältnisses von Oberfläche zu Volumen gesteuert und verbessert werden. Der theoretische Vergleich mit Kohlenstoff‐Nanoröhrchen zeigt, dass Diamant‐Nanodrähte energetisch und mechanisch existenzfähige Strukturen sind – die reproduzierbare Synthese kristalliner Diamant‐Nanodrähte bleibt aber schwierig. Wir geben eine aktuelle und umfassende Übersicht über Diamant‐Nanodrähte, in der wir ihre Synthese, Strukturen, Eigenschaften und Anwendungen diskutieren.

show abstract

“…[1][2][3][4][5][6] Among these materials, nanodiamond has been projected as one of the field emitting materials, due to its outstanding mechanical, chemical, physical, and high electron field emission (EFE) properties. 2 For an ideal emitter, n-type doped semiconducting diamond with a negative electron affinity (NEA) surface is desirable.…”

Section: Introductionmentioning

confidence: 99%

Nanostair Formation and Field Emission Enhancement on High Dose N-Ion-Implanted Ultrananocrystalline Diamond Pyramid Tips

Joseph¹,

Chen²,

Chen³

et al. 2011

Mat Express

View full text Add to dashboard Cite

We herein report high dose nitrogen (N) ion implantation induced nanostructural modifications and enhanced electron field emission (EFE) properties of ultrananocrystalline diamond (UNCD) pyramid tips. Transmission electron microscopy investigations indicate nanostair type surface formation on the pyramid tips. Evidence of complex nanostructural changes due to ion implantation are found, such as, graphitic or amorphous type transition, volume expansion (about 0.56 μm³), and nanostair type surface formation. The nanostructural modifications possibly enhanced the grain boundary incorporation of N and the electron transport through a transfer doping mechanism, which in turn improved the EFE properties of the ion-implanted pyramid tips. In particular upon N ion implantation the turn-on field is found to reduce from 3.6 V/μm (for unimplanted tips) to 2.8 V/μm and the current density is increased from 0.1 mA/cm² (unimplanted tips) to 5.4 mA/cm² at an applied field of 12.5 V/μm.

show abstract

Microstructure and electron field emission study of diamond nanorod decorated a-SiO2 nanowires by microwave Ar–CH4/H2 plasma chemical vapor deposition with addition of N2

Cited by 7 publications

References 18 publications

Diamond Nanowires: Fabrication, Structure, Properties and Applications

Diamond Nanowires: Fabrication, Structure, Properties and Applications

Diamant‐Nanodrähte: Herstellung, Struktur, Eigenschaften und Anwendungen

Nanostair Formation and Field Emission Enhancement on High Dose N-Ion-Implanted Ultrananocrystalline Diamond Pyramid Tips

Contact Info

Product

Resources

About