Microwave-enhanced dephasing time in a HgCdTe film

Wei, Lixia; Gao, Kuang-Hong; Liu, X. Z.; Yu, G.; Wang, Q. W.; Lin, Te-Hsien; Guo, S.; Wei, Ying; Yang, Jing; He, Lin; Dai, Ning; Jh, Chu; Austing, D. G.

doi:10.1063/1.4773178

Cited by 3 publications

(3 citation statements)

References 39 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…We use zν to be in consistent with reference [41] and zν is equal to 1/κ. 13 Figure 5: Temperature dependence of the crossing points at different filling plateau transitions (log-linear plot).…”

Section: Resultsmentioning

confidence: 99%

“…However, τ ϕ saturates at real experimental measurements [2], which raises an issue that whether the saturation of coherence time is intrinsic or not. There have been substantial amounts of studies of τ ϕ in different systems [2][3][4][5][6][7][8][9][10][11][12][13] including quasi-one-dimensional wires, thin films, two-dimensional electron gas (2DEG) and three-dimensional polycrystalline. Although extrinsic mechanisms may explain the coherence time saturation at ultra-low temperatures [13][14][15], intrinsic mechanisms cannot be excluded [11,16].…”

Section: Introductionmentioning

confidence: 99%

“…There have been substantial amounts of studies of τ ϕ in different systems [2][3][4][5][6][7][8][9][10][11][12][13] including quasi-one-dimensional wires, thin films, two-dimensional electron gas (2DEG) and three-dimensional polycrystalline. Although extrinsic mechanisms may explain the coherence time saturation at ultra-low temperatures [13][14][15], intrinsic mechanisms cannot be excluded [11,16]. The phase coherence time in 2DEG can be determined from the low field magneto-transport measurements [2,3,7,8,10,11].…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Scaling properties of the plateau transitions in the two-dimensional hole gas system

et al. 2016

View full text Add to dashboard Cite

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Scaling properties of the plateau transitions in the two-dimensional hole gas system

et al. 2016

View full text Add to dashboard Cite

Room-Temperature Anisotropic Plasma Mirror and Polarization-Controlled Optical Switch Based on Type-II Weyl Semimetal WP2

Zhang

et al. 2020

Phys. Rev. Applied

View full text Add to dashboard Cite

Magnetotransport properties and stress control of HgCdTe thin film

Zhang¹,

He²,

Tu³

et al. 2020

Acta Phys. Sin.

View full text Add to dashboard Cite

In recent years, the research on topological materials, including topological insulator and topological semimetal, has received a lot of attention in condensed matter physics. HgCdTe, widely used in infrared detection, also holds huge potential in this field. It has been reported that the strained thin Hg0.865Cd0.135Te can realize topological insulator phase by using a CdZnTe substrate. However, the stress caused by changing substrate has great limitations. For example, the stress cannot be changed once the sample has been grown. Hence, we try to use a piezoceramics (PZT) instead to implement the stress and control the properties of HgCdTe. The main purpose of our experiment is to verify its validity. As is well known, the band structure of Hg1–xCdxTe can be precisely controlled by changing the content of Cd. When x lies between 0 and 0.165, HgCdTe features an inverted band structure, which is the premise of realizing topological phase. In this work, an inversion layer is induced on a single crystal grown HgCdTe bulk material by anodic oxidation, whose content of Cd is confirmed to be 0.149 by using XRD. Then the sample is thinned and attached to a PZT, which the tuning of stress is realized by applying a voltage to. Ohmic contacts are realized by indium in van der Pauw configuration. All measurements are carried out by using an Oxford Instruments 4He cryostat with magnetic field applied perpendicularly to the sample plane. At 1.5 K and zero voltage, an evident SdH oscillation is observed. By fitting the linear relationship between filling factor and the reciprocal of magnetic field, the concentration is obtained to be <inline-formula><tex-math id="M2">\begin{document}${n_{\rm{s}}} = 1.25 \times {10^{16}}\;{{\rm{m}}^{ - 2}}$\end{document}</tex-math><alternatives><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="5-20191330_M2.jpg"/><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="5-20191330_M2.png"/></alternatives></inline-formula>. Subsequently, we scan the voltage from 200 V to –200 V continuously in different magnetic fields. Two phenomena with different characteristics are observed. It is found that the resistance changes linearly with stress at zero field while an SdH oscillation-like behavior occurs at high field. We attribute such a difference to the existence of two conductive channels: one is the bulk material and the other is the two-dimensional electron gas. It is also noteworthy that the topological phase in our sample cannot be determined because the quantum Hall conductance is polluted by the conductance of bulk material. In conclusion, our results show that it is an effective way to use the PZT to tune the stress and this method can also be applied to the research of other materials.

show abstract

Microwave-enhanced dephasing time in a HgCdTe film

Cited by 3 publications

References 39 publications

Scaling properties of the plateau transitions in the two-dimensional hole gas system

Scaling properties of the plateau transitions in the two-dimensional hole gas system

Room-Temperature Anisotropic Plasma Mirror and Polarization-Controlled Optical Switch Based on Type-II Weyl Semimetal WP2

Magnetotransport properties and stress control of HgCdTe thin film

Contact Info

Product

Resources

About