Microwave Field Effect Transistors

Bera, Subhash Chandra

doi:10.1007/978-981-13-3004-9_6

Cited by 1 publication

(1 citation statement)

References 28 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…On the other hand, Fig. 4(h) displays an outlier for the shortest TFT at the lower bias because of the dependence of f MAX from both the transconductance and the output resistance (not affecting f T ) [10], [26], which is higher at lower bias voltage and quickly drops down at higher bias voltage (device entering in saturation region). The combination of both the effect of the top biasing and the misalignment with the channel length enables the use of longer TFTs, easier to fabricate than shorter ones, for high-frequency and analog applications.…”

Section: B Ac Performancementioning

confidence: 99%

AC Performance Tunability of Flexible Bottom-Gate InGaZnO TFTs by an Additional Top-Gate Contact

Catania,

Saeedzadeh Khaanghah,

Corsino

et al. 2023

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

This study explores the performance tuning of flexible InGaZnO (IGZO) thin-film transistors (TFTs) using a double-gate configuration. DC analysis on individually controllable double-gate TFTs highlights that the bottom-gate biasing is highly effective in facilitating efficient switching of the devices, whereas the top-gate biasing allows for controlling their performance. This is demonstrated for the ac response of the devices with different channel lengths showing the tunability of f T and f MAX with a maximum relative tuning up to 130% for f T and 170% for f MAX . A more efficient control is observed for longer TFTs, resulting in increased characteristics frequency up to 50%. Furthermore, the effect of the performance tunability is also reported even when the double-gate TFTs are exposed to tensile strain induced by a bending radius of 2 mm. These findings indicate new possibilities for the design of flexible analog systems with dynamically adjustable performance.

show abstract

Section: B Ac Performancementioning

confidence: 99%