Mid-Infrared HgCdTe Heterostructure and Its Potential Application to APD Operation

Kopytko, M.; Murawski, K.; Madejczyk, P.; Sobieski, Jan; Gawron, W.

doi:10.1109/led.2022.3159303

Cited by 2 publications

(1 citation statement)

References 27 publications

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“…Figure 2 presents the secondary ion mass spectroscopy (SIMS) profile of the n + G3P + G2G1N + Hg1-xCdxTe heterostructure with a composition of x = 0.32 in the absorbing region. This design of the structure, with the research on it, were already published [10]. This is an example of a heterostructure designed for HOT and MWIR operation.…”

Section: Mwir Examplesmentioning

confidence: 99%

MCT heterostructures for higher operating temperature infrared detectors designed in Poland

2024

Opto-Electronics Review

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and VIGO Photonics S.A. Fully doped HgCdTe epilayers were grown with the metal organic chemical vapour deposition technique which provides a wide range of material composition covering the entire infrared range from 1.5 µm to 14 µm. Fundamental issues concerning the design of individual areas of the heterostructure including: the absorber, contacts, and transient layers with respect to their thickness, doping and composition were discussed. An example of determining the gain is also given pointing to the potential application of the obtained devices in avalanche photodiode detectors that can amplify weak optical signals. Selected examples of the analysis of current-voltage and spectral characteristics are shown. Multiple detectors based on a connection in series of small individual structures are also presented as a solution to overcome inherent problems of low resistance of LWIR photodiodes. The HgCdTe detectors were compared with detectors from III-V materials. The detectors based on InAs/InAsSb superlattice materials achieve very comparable parameters and, in some respects, they are even superior to those with mercury cadmium telluride.

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Section: Mwir Examplesmentioning

confidence: 99%

MCT heterostructures for higher operating temperature infrared detectors designed in Poland

2024

Opto-Electronics Review

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Theoretical design and simulation of uncooled PbSe/Ge mid-wavelength infrared avalanche photodetector

Liu,

Su,

et al. 2024

J. Phys. D: Appl. Phys.

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To comply with SWaP3 specifications in infrared detectors, a novel uncooled mid-wavelength infrared avalanche photodetector (MWIR-APD) architecture based on PbSe/Ge heterojunction was proposed. A maximum high gain of 40.8 was achieved, which is comparable with cooled MWIR-APDs, including HgCdTe, and Type Ⅱ superlattices (T2SLs). The theoretical simulation shows that it is the significant difference in permittivity between PbSe and Ge that results in a sufficient electric field contrast between the absorption and multiplication layers, which facilitates the structural design of this APD. Additionally, a structural parameter limit was established by investigating the variation in the punch-through and breakdown voltages. Furthermore, the decreasing PbSe thickness will improve the device’s gain but at the expense of decreasing frequency response and quantum efficiency. This PbSe/Ge APD architecture provides a new solution for the MWIR detection at room temperature.

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Mid-Infrared HgCdTe Heterostructure and Its Potential Application to APD Operation

Cited by 2 publications

References 27 publications

MCT heterostructures for higher operating temperature infrared detectors designed in Poland

MCT heterostructures for higher operating temperature infrared detectors designed in Poland

Theoretical design and simulation of uncooled PbSe/Ge mid-wavelength infrared avalanche photodetector

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