Mid-infrared III–V semiconductor lasers epitaxially grown on Si substrates

Abstract

There is currently much activity toward the integration of mid-infrared semiconductor lasers on Si substrates for developing a variety of smart, compact, sensors based on Si-photonics integrated circuits. We review this rapidly-evolving research field, focusing on the epitaxial integration of antimonide lasers, the only technology covering the whole mid-to-far-infrared spectral range. We explain how a dedicated molecular-beam epitaxy strategy allows for achieving high-performance GaSb-based diode lasers, InAs/AlSb quantum cascade lasers, and InAs/GaInSb interband cascade lasers by direct growth on on-axis (001)Si substrates, whereas GaAs-on-Si or GaSb-on-Si layers grown by metal-organic vapor phase epitaxy in large capability epitaxy tools are suitable templates for antimonide laser overgrowth. We also show that etching the facets of antimonide lasers grown on Si is a viable approach in view of photonic integrated circuits. Remarkably, this review shows that while diode lasers are sensitive to residual crystal defects, the quantum cascade and interband cascade lasers grown on Si exhibit performances comparable to those of similar devices grown on their native substrates, due to their particular band structures and radiative recombination channels. Long device lifetimes have been extrapolated for interband cascade lasers. Finally, routes to be further explored are also presented.

Integrated Lasers on Silicon at Communication Wavelength: A Progress Review

“…[25,94] Furthermore, the mismatch of crystal polarity between III-V and Si (IV) leads to antiphase boundaries which are 2D defects generating a local excess or lack of electrical charges and hence affect the efficiency of the laser devices. [95] In order to overcome the above-mentioned challenges, Wang et al [35] demonstrated an optically pumped DFB laser array using selective area growth of III-V gain material in confined regions. The schematic of the laser array is illustrated in Figure 6(a).…”

“…[ 25,94 ] Furthermore, the mismatch of crystal polarity between III–V and Si (IV) leads to antiphase boundaries which are 2D defects generating a local excess or lack of electrical charges and hence affect the efficiency of the laser devices. [ 95 ]…”

Machine learning and density functional theory simulation of the electronic structural properties for novel quaternary semiconductors

“…Optoelectronic semiconductors that exhibit excellent electronic and optical properties have significant application potential in solar cells, 1,2 light-emitting diodes (LEDs), 3,4 laser diodes, 5 bioimaging, 6 and photodetectors. 7,8 Throughout, the crystal structures of optoelectronic semiconductors are mainly comprised of octahedral and tetrahedral structures.…”

Reduction of Structural Defects in the GaSb Buffer Layer on (001) GaP/Si for High Performance InGaSb/GaSb Quantum Well Light-Emitting Diodes

“…5,6 For example, high performance 2.3 μm wavelength mid-infrared laser diodes epitaxially grown on (001) Si have been demonstrated by a few groups. 7,8 Also, InAs/InAsSb type-II superlattice nBn photodetectors monolithically integrated on Si with a high specific detectivity of 1.5 × 10 10 Jones at 200 K have also been reported. 9 Despite significant strides in the improvement of device performance, challenges still remain in the growth of highquality metamorphic GaSb buffer layers on Si, which ultimately determines the device quality.…”

“…The short-wavelength infrared (SWIR) band is an important electromagnetic spectral region for gas sensing, molecular spectroscopy, military missile tracking, and thermal imaging. , Among the various materials available for SWIR optoelectronics, Sb-based III–V semiconductors have been the main choice because of their direct band gap, strong absorption coefficients, and high electron mobility. , Different kinds of detectors and emitters were developed by using such materials, but they have to be grown on relatively expensive and small-sized wafers such as GaSb or InSb. Therefore, monolithic integration of Sb-based optoelectronic devices on a Si wafer has recently drawn strong attention, not only for reducing the epitaxial cost but also for light-source integrated Si photonics applications. , For example, high performance 2.3 μm wavelength mid-infrared laser diodes epitaxially grown on (001) Si have been demonstrated by a few groups. , Also, InAs/InAsSb type-II superlattice nBn photodetectors monolithically integrated on Si with a high specific detectivity of 1.5 × 10 10 Jones at 200 K have also been reported …”