Mid-infrared lasing from self-consistent quantum wells at a type II single broken-gap heterointerface

Moiseev, K. D.; Mikhaĭlova, M. P.; Yakovlev, Yu. P.

doi:10.1016/j.physe.2003.08.065

Cited by 6 publications

(1 citation statement)

References 9 publications

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“…Mid-IR semiconductor lasers [11,12] have been the focus of a coordinated research activity within AFRL, in a program brought together at the Directed Energy Directorate in Albuquerque, New Mexico. Their compact sizes ( Fig.…”

Section: Mid-ir Semiconductor Lasersmentioning

confidence: 99%

Basic materials research programs at the U.S. Air Force Office of Scientific Research

Carlson

Goretta

2006

Materials Science and Engineering: B

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The Air Force Office of Scientific Research (AFOSR) annually sponsors approximately 5000 research scientists at 1000 universities and laboratories, generating about 10,000 Ph.D. graduates per decade, all expected to publish their basic research findings in peer-reviewed journals. After a brief introduction of the nature of AFOSR's support to basic research in the U.S. and international scientific communities, work it supports at the frontiers of materials science is highlighted. One focused research theme that drives our investment is the MEANS program. It begins with the end in mind; materials are designed with practicable manufacture as an explicit initial goal. AFOSR's broad research portfolio comprises many materials. Nanotechnology efforts include optical materials that reduce distortion to the scale of the nanoparticles themselves. Advances in semiconductors include breakthroughs in Group III nitrides, some of which emanated from Asia under sponsorship from AFOSR's Asian office. Advances in structural materials include those for use at ultra-high temperatures and self-healing composites. The growing role of high-performance computing in design and study of functional, biological, and structural materials is also discussed. Published by Elsevier B.V.

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Section: Mid-ir Semiconductor Lasersmentioning

confidence: 99%

Basic materials research programs at the U.S. Air Force Office of Scientific Research

Carlson

Goretta

2006

Materials Science and Engineering: B

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Interface Lasers with Asymmetric Band Offset Confinement

Moiseev

Yakovlev

2006

Mid-Infrared Semiconductor Optoelectronics

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Electroluminescence of type II broken-gap p-Ga0.84In0.16As0.22Sb0.78∕p-InAs heterostructures with a high-mobility electron channel at the interface

Oswald

Pangrác

Hulicius

et al. 2005

Journal of Applied Physics

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Effects of lattice mismatch and bulk anisotropy on interband tunneling in broken-gap heterostructures J. Appl. Phys. 97, 063704 (2005); 10.1063/1.1857058 Interface photoluminescence in type II broken-gap P-Ga 0.84 In 0.16 As 0.22 Sb 0.78 / p-InAs single heterostructures Low temperature photoluminescence of Ga 0.84 In 0.16 As 0.22 Sb 0.78 solid solutions lattice matched to InAsGa 0.84 In 0.16 As 0.22 Sb 0.78 quaternary solid solutions, lattice matched to InAs, were grown by liquid phase epitaxy on ͑100͒-oriented p-InAs substrates from In-rich melt. The p-type Ga 0.84 In 0.16 As 0.22 Sb 0.78 layers were intentionally undoped or slightly doped with Sn to the hole concentration about p ϳ 5 ϫ 10 16 cm −3 . This allowed us to obtain a high-mobilityϳ͑3.5− 5.0͒ ϫ 10 4 cm 2 V −1 s −1 electron channel at the type II broken-gap p-Ga 0.84 In 0.16 As 0.22 Sb 0.78 / p-InAs heterointerface. Low-temperature ͑T =5 K͒ electroluminescence spectra exhibited two pronounced emission bands h 1 = 0.372 eV and h 2 = 0.400 eV under forward bias. The emission band h 2 was split into two lines and was attributed to interband transitions through acceptor and valence-band states in the bulk InAs, whereas emission band h 1 was ascribed to interface-related radiative transitions of electrons from the two-dimensional electron channel to the interface states at the p-Ga 0.84 In 0.16 As 0.22 Sb 0.78 / p-InAs heteroboundary.

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Mid-infrared lasing from self-consistent quantum wells at a type II single broken-gap heterointerface

Cited by 6 publications

References 9 publications

Basic materials research programs at the U.S. Air Force Office of Scientific Research

Basic materials research programs at the U.S. Air Force Office of Scientific Research

Interface Lasers with Asymmetric Band Offset Confinement

Electroluminescence of type II broken-gap p-Ga0.84In0.16As0.22Sb0.78∕p-InAs heterostructures with a high-mobility electron channel at the interface

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