Mid-infrared Suspended Membrane Waveguide and Ring Resonator on Silicon-on-Insulator

Cheng, Zhenzhou; Chen, Xia; Wong, Chi Yan; Xu, Ke; Tsang, Hon Ki

doi:10.1109/jphot.2012.2210700

Cited by 155 publications

(89 citation statements)

References 23 publications

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“…One strategy involves replacing the lossy silicon oxide cladding with other materials exemplified by silicon-on-nitride ( Figure 3A-B) [10] and germanium-on-nitride [17] or with air cladding in pedestal [11,18,19] or suspended silicon structures [12][13][14][20][21][22][23] (Figure 3C-H). Another option is Ge-on-Si (or SiGeon-Si), which claims the advantage of compatibility with Si CMOS processing, as high-quality Ge can be epitaxially grown on Si ( Figure 3I-J) [15,17,[24][25][26][27][28].…”

Section: Waveguides and Passive Devicesmentioning

confidence: 99%

Mid-infrared integrated photonics on silicon: a perspective

et al. 2017

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Abstract:The emergence of silicon photonics over the past two decades has established silicon as a preferred substrate platform for photonic integration. While most silicon-based photonic components have so far been realized in the near-infrared (near-IR) telecommunication bands, the mid-infrared (mid-IR, 2-20-μm wavelength) band presents a significant growth opportunity for integrated photonics. In this review, we offer our perspective on the burgeoning field of mid-IR integrated photonics on silicon. A comprehensive survey on the state-of-the-art of key photonic devices such as waveguides, light sources, modulators, and detectors is presented. Furthermore, on-chip spectroscopic chemical sensing is quantitatively analyzed as an example of mid-IR photonic system integration based on these basic building blocks, and the constituent component choices are discussed and contrasted in the context of system performance and integration technologies.

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Section: Waveguides and Passive Devicesmentioning

confidence: 99%

Mid-infrared integrated photonics on silicon: a perspective

et al. 2017

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“…Wang et al [50] integrated graphene-on-silicon suspended membrane waveguide (SMW). The silicon SWM, which is proposed and demonstrated by Cheng et al [51], can eliminate the absorption of buried oxide in the midinfrared spectral range and take full advantage of the silicon transparent window of 1-8 m. So, the demonstrated graphene-on-silicon photodetectors can be operated in the mid-infrared spectral region. Moreover, the graphene/silicon heterostructure was employed in the work which reduced the dark current and achieving a high ON/OFF current ratio in a broadband spectral range.…”

Section: Waveguide-integrated Graphene Photodetectorsmentioning

confidence: 99%

Progress on Waveguide-Integrated Graphene Optoelectronics

Wang

Cheng

2018

Advances in Condensed Matter Physics

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Graphene, a single layer of carbon atoms arranged in the form of hexagonal lattice, has many intriguing optical and electrical properties. However, due to the atomic layer thickness, light-matter interactions in the monolayer graphene are naturally weak when the light is normally incident to the material. To overcome this challenge, waveguide-integrated graphene optoelectronic devices have been proposed and demonstrated. In such coplanar configurations, the propagating light in the waveguide can significantly interact with the graphene layer integrated on the surface of the waveguide. The combination of photonic integrated circuits and graphene also enables the development of graphene devices by using silicon photonic technology, which greatly extends the scope of graphene's application. Moreover, the waveguide-integrated graphene devices are fully CMOS-compatible, which makes it possible to achieve low-cost and high-density integration in the future. As a result, the area has been attracting more and more attention in recent years. In this paper, we introduce basic principles and research advances of waveguide-integrated graphene optoelectronics.

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“…Towards mid-IR applications, different types of Group IV waveguides have been reported recently, based on silicon-on-insulator (SOI) [191][192][193], silicon-on-sapphire [142,194,195], silicon-on-porous-silicon [192], siliconon-nitride [196,197], suspended membrane silicon [198], silicon pedestal [199], and germanium-on-silicon [200]. Most of the waveguides are not aimed specifically at nonlinear applications, and little attention has been paid to dispersion engineering [196].…”

Section: Devicesmentioning

confidence: 99%

Nonlinear Group IV photonics based on silicon and germanium: from near-infrared to mid-infrared

et al. 2014

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Group IV photonics hold great potential for nonlinear applications in the near-and mid-infrared (IR) wavelength ranges, exhibiting strong nonlinearities in bulk materials, high index contrast, CMOS compatibility, and cost-effectiveness. In this paper, we review our recent numerical work on various types of silicon and germanium waveguides for octave-spanning ultrafast nonlinear applications. We discuss the material properties of silicon, silicon nitride, silicon nano-crystals, silica, germanium, and chalcogenide glasses including arsenic sulfide and arsenic selenide to use them for waveguide core, cladding and slot layer. The waveguides are analyzed and improved for four spectrum ranges from visible, near-IR to mid-IR, with material dispersion given by Sellmeier equations and wavelength-dependent nonlinear Kerr index taken into account. Broadband dispersion engineering is emphasized as a critical approach to achieving on-chip octavespanning nonlinear functions. These include octave-wide supercontinuum generation, ultrashort pulse compression to sub-cycle level, and mode-locked Kerr frequency comb generation based on few-cycle cavity solitons, which are potentially useful for next-generation optical communications, signal processing, imaging and sensing applications.

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Mid-infrared Suspended Membrane Waveguide and Ring Resonator on Silicon-on-Insulator

Cited by 155 publications

References 23 publications

Mid-infrared integrated photonics on silicon: a perspective

Mid-infrared integrated photonics on silicon: a perspective

Progress on Waveguide-Integrated Graphene Optoelectronics

Nonlinear Group IV photonics based on silicon and germanium: from near-infrared to mid-infrared

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