2011
DOI: 10.1063/1.3531760
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Midinfrared electroluminescence from PbTe/CdTe quantum dot light-emitting diodes

Abstract: Midinfrared electroluminescence of epitaxial PbTe quantum dots in CdTe with emission in the 2–3 μm wavelength range is demonstrated up to room temperature. The light-emitting diode structures were grown by molecular beam epitaxy with the active PbTe quantum dots embedded in the intrinsic zone of a CdTe/CdZnTe p-i-n junction on GaAs (100) substrates. The current and temperature dependences of the electroluminescence emission are presented. The comparison with photoluminescence measurements shows that midinfrare… Show more

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Cited by 40 publications
(25 citation statements)
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“…For the formation of thin-film solids of PbTe/CdTeQ Ds, the main objective is to remove the organic ligandsa nd to sinter the CdTes hells, yielding af ully inorganic QD solid, in analogy to epitaxially grownP bTe/CdTen ano-heterostructures. [13] The necessity for removal of the organic cappingl igandsh as already been discussed in previous studies, thus showing the ability of organic molecules to quencht he mid-IR emission of PbSe NCs through the energy transfer of mid-IR electronic excitation to the vibrations of the organic ligands. [20] PbTe/CdTe QDs dispersedi nt etrachloroethane (TCE, 50 mg mL À1 )w ere spin-coated onto ag lass substrate (step 1, Figure 4a), followed by drying on ah ot plate (step 2).…”
mentioning
confidence: 94%
See 1 more Smart Citation
“…For the formation of thin-film solids of PbTe/CdTeQ Ds, the main objective is to remove the organic ligandsa nd to sinter the CdTes hells, yielding af ully inorganic QD solid, in analogy to epitaxially grownP bTe/CdTen ano-heterostructures. [13] The necessity for removal of the organic cappingl igandsh as already been discussed in previous studies, thus showing the ability of organic molecules to quencht he mid-IR emission of PbSe NCs through the energy transfer of mid-IR electronic excitation to the vibrations of the organic ligands. [20] PbTe/CdTe QDs dispersedi nt etrachloroethane (TCE, 50 mg mL À1 )w ere spin-coated onto ag lass substrate (step 1, Figure 4a), followed by drying on ah ot plate (step 2).…”
mentioning
confidence: 94%
“…[3a, 12] In striking contrast, however,b right and stable PL, lasing, and electroluminescence at mid-IR wavelengths of 2-3.5 mmh ave been reported for PbTeQ Ds that were produced by annealing PbTe/CdTeq uantum-wells tructures grown by using molecular beam epitaxy. [13] Efficient PL arises from type-I band alignment (i.e. substantial confinement of both electrons and holes) between the rock-salt PbTea nd zinc-blende CdTe structures ( Figure 1a).…”
mentioning
confidence: 99%
“…Such devices combine the electrical and mechanical stability of conducting oxides/ semiconducting nanoparticles and the processing flexibility of conjugated LEPs. Nanoparticles such as cadmium telluride [5][6][7], cadmium selenide [8][9], cadmium sulphide [10][11][12] also pose as an active medium in light emitting diodes categorized under Quantum dot light emitting diodes.…”
Section: Introductionmentioning
confidence: 99%
“…40,41 An essential part of the proposed structure in Ref. 41 is electron tunneling between QW and QD states.…”
Section: -20mentioning
confidence: 99%