Millimeter-wave Detectors Based on Antenna-coupled Low-barrier Schottky Diodes

Shashkin, V. I.; Drjagin, Y. A.; Zakamov, V. R.; Krivov, Sergei V.; Kukin, L. M.; Murel, A. V.; Chechenin, Yuri I.

doi:10.1007/s10762-007-9272-2

Cited by 55 publications

(17 citation statements)

References 9 publications

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“…Кроме этого, передача информации на ча-стотах свыше 300 ГГц подразумевает увеличенную информационную скорость и, как следствие, де-текторы должны обладать повышенным быстродей-ствием. Этим требованиям удовлетворяют полупро-водниковые детекторы на основе диодов Шоттки и транзисторов [19][20][21]. Эквивалентная мощность шумов таких детекторов лежит в диапазоне 10 −11 -10 −10 Вт/Гц 1/2 , чувствительность составляет около 1-10 кВ/Вт [22][23][24] при комнатной температуре.…”

Section: активные элементы терагерцевого диапазонаunclassified

Prospects of Terahertz Frequencies Application

Ermolaev¹,

Talanov²,

Romanyuk³

2017

Rocket-Space Device Engineering and Information Systems

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Аннотация. Рассматривается возможный облик космической систем для работы в терагерцевом диапазоне частот (0,1-10 ТГц). Приводится конструкция и выбор антенн, чувствительных элементов и излучателей, перспективных для применения в кос-мической связи на терагерцевых частотах. В качестве приемной антенны взят массив (квадрат со стороной 1 м) из рупорных антенн с входным диаметром 1 см с быстрым твердотельным детектором, а в качестве передающей антенны принята па-раболическая антенна с диаметром 10 см. Рассчитывается необходимая мощность передатчика для дальностей связи 1000, 4000, 20 000 и 40 000 км. Проводится оценка затухания сигнала в атмосфере за счет влаги, которая является основным ис-точником поглощения терагерцевого излучения. Данное затухание составляет величину порядка 20 дБ. Однако выбранная конструкция антенн в терагерцевом диапазоне частот позволяет компенсировать сильное затухание как атмосферы, так и сво-бодного пространства. Также одним из преимуществ терагерцевого диапазона станет возможность создания узких диаграмм направленности излучения, что повышает эффективность использования спектра. Для космической связи борт-борт мощности современных источников терагерцевого диапазона достаточно. Космическая связь земля-борт возможна с низкоорбитальными космическими аппаратам, а для высокоорбитальных космических аппаратов можно использовать импульсный режим передачи данных. Abstract. The article considers the possible concept of space systems capable of operating in the terahertz frequency range (0,1-10 THz). The design and selection of antennas, sensors and emitters are revealed for applications in space communications at terahertz frequencies. An array (a square of 1 m side) of horn antennas with an output diameter of 1 cm and a fast solid-state detector was considered as the receiving antenna, and a parabolic antenna with a diameter of 10 cm was taken as the transmitting antenna. The required transmitter power for the communication ranges of 1000, 4000, 20 000 and 40 000 km has been calculated. An atmospheric attenuation of the signal due to the moisture, which is the main source of absorption of the terahertz radiation, is evaluated. This attenuation is about 20 dB. However, the selected design of the terahertz frequency range antennas can compensate for strong attenuation both in the atmosphere and in empty space. Moreover, one of the benefits of the terahertz frequency range is an ability to create a narrow radiation pattern that increases the efficiency of spectrum application. The article shows that the power of modern sources of terahertz is enough for spacecraft-to-spacecraft communication. Earth-to-spacecraft communication is possible with low-orbit spacecraft; for high-orbit spacecraft, the pulse mode of data transmission can be used.

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Section: активные элементы терагерцевого диапазонаunclassified

Prospects of Terahertz Frequencies Application

Ermolaev¹,

Talanov²,

Romanyuk³

2017

Rocket-Space Device Engineering and Information Systems

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“…The decrease of the effective height is reached by the increase of tunnel transparency near to the top of the potential barrier reached by strong non-uniform doping (δ-doping) by Si of semiconductor (GaAs) at the contact with metal. The detailed description of investigated diodes is presented in papers by Shashkin and co-authors [3][4][5][6]. Here we offer the model of the low-barrier Schottky diode, which is focused on the identification of technological areas responsible for 1/f noise.…”

Section: Introductionmentioning

confidence: 99%

PHYSICAL ORIGINS OF 1/f NOISE IN Si δ-DOPED SCHOTTKY DIODES

2014

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A model of Schottky diode with δ-doping is suggested. The aim is the determination of technological areas of the diode, which are responsible for the 1/f noise. Series resistance of base and contacts, and the possible leakage are taken into account. Equivalent parameters of the diode are defined from the analysis of the current-voltage characteristic. The model of fluctuations in the charge of non-compensated donors in δ-layer of Schottky junction (∆Ns -model) and model of 1/f noise in leakage current are suggested for an explanation of experimental data. Our study show that, in the investigated diodes, in a million atomic impurities, there are about 1-10 special impurity atoms with stochastically modulated ionization energy.

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“…Structures with asymmetric nonlinear currentvoltage (I-V ) characteristic are commonly used as the sensing elements of the detectors. As an example, we mention the interband tunneling diodes [3], planar doped barrier diodes [4], semimetal-semiconductor transition diodes [5], and Schottky (Mott)-barrier diodes [6]- [9].…”

Section: Introductionmentioning

confidence: 99%

Sensing Microwave-Terahertz Detectors Based on Metal-Semiconductor-Metal Structures With Symmetrical I–V Characteristic

Shashkin

Vostokov

2013

IEEE J. Electron Devices Soc.

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We discuss the characteristics of new sensing elements based on a symmetrical metal-semiconductor-metal structure, which are designed for detection of microwave-terahertz signals. The schemes of connection of the sensing elements in the high-frequency path and the low-frequency measuring circuit are considered. Expressions for the volt-watt sensitivity and the noise-equivalent power are obtained. Comparison of the obtained characteristics with those of the detector zerobias Schottky (Mott)-barrier diode is carried out. It is shown that the characteristics of the symmetrical sensing elements are comparable with or exceed in some cases similar characteristics of the detector zero-bias diodes. IndexTerms-Metal-semiconductor-metal structure, microwave-terahertz detector, schottky (Mott)-barrier transition.

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Millimeter-wave Detectors Based on Antenna-coupled Low-barrier Schottky Diodes

Cited by 55 publications

References 9 publications

Prospects of Terahertz Frequencies Application

Prospects of Terahertz Frequencies Application

PHYSICAL ORIGINS OF 1/f NOISE IN Si δ-DOPED SCHOTTKY DIODES

Sensing Microwave-Terahertz Detectors Based on Metal-Semiconductor-Metal Structures With Symmetrical I–V Characteristic

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