Miniaturized InSb photovoltaic infrared sensor operating at room temperature

Camargo, Edson Gomes; Kuze, Naohiro; Ueno, K.; Kawakami, Yoshifumi; Moriyasu, Yoshitaka; Nagase, Kazuhiro; Satō, Masayuki; Endo, H.; Ishibashi, K.; Ozaki, Masaru

doi:10.1117/12.663162

Cited by 9 publications

(5 citation statements)

References 4 publications

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“…Because the open circuit voltage V o is proportional to the R 0 value of the photodiode, by connecting two or more photodiodes in series, we can obtain a high signal voltage and a high signal-to-noise ratio. 32) Therefore, 700 photodiodes were patterned on a 600 Â 600 m 2 chip and connected in series, as shown in Fig. 15(a).…”

Section: Morphology Improvement Of the Ir Incidence Windowmentioning

confidence: 99%

InSb Mid-Infrared Photon Detector for Room-Temperature Operation

Ueno

Camargo

Katsumata

et al. 2013

Jpn. J. Appl. Phys.

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We developed a small InSb mid-infrared (2–7 µm wavelength range) photon detector that operates at room temperature. The photodiode was made from (hetero epitaxial) InSb layers that were grown on a semi-insulating GaAs substrate by molecular beam epitaxy. To suppress the effects of the diffusion current of the p–i–n photodiode, we used an AlInSb barrier layer that raises the resistance of the photodiode. We also optimized the device's doping concentration and the infrared incidence window structure. These optimization steps realized high photoelectric current output in a room-temperature environment. We also increased the signal-to-noise ratio of the detector by connecting multiple photodiodes in series. The size of this detector is 1.9×2.7×0.4 mm3 and the detectivity is 2.8×108 cm Hz1/2/W at 300 K. This is a practical IR detector that can be used in general signal amplification ICs.

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Section: Morphology Improvement Of the Ir Incidence Windowmentioning

confidence: 99%

InSb Mid-Infrared Photon Detector for Room-Temperature Operation

Ueno

Camargo

Katsumata

et al. 2013

Jpn. J. Appl. Phys.

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“…Blackbody response has been widely applied as one of the standard characterizations for infrared focal plane array detectors, which is an important parameter reflecting the sensitivity of infrared photodetectors and determines the corresponding practical applications (1). Up to now, most of the available and high-performance infrared photodetectors with blackbody response are based on traditional III-V and II-VI materials such as InGaAs, InSb, and HgCdTe (2)(3)(4). However, high growth costs of molecule beam epitaxy, metal-organic chemical vapor deposition, and other epitaxial growth methods, as well as the strict cooling requirements, severely limit the wider application and promotion of these traditional infrared detectors.…”

Section: Introductionmentioning

confidence: 99%

Blackbody-sensitive room-temperature infrared photodetectors based on low-dimensional tellurium grown by chemical vapor deposition

et al. 2021

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Blackbody-sensitive room-temperature infrared detection is a notable development direction for future low-dimensional infrared photodetectors. However, because of the limitations of responsivity and spectral response range for low-dimensional narrow bandgap semiconductors, few low-dimensional infrared photodetectors exhibit blackbody sensitivity. Here, highly crystalline tellurium (Te) nanowires and two-dimensional nanosheets were synthesized by using chemical vapor deposition. The low-dimensional Te shows high hole mobility and broadband detection. The blackbody-sensitive infrared detection of Te devices was demonstrated. A high responsivity of 6650 A W−1 (at 1550-nm laser) and the blackbody responsivity of 5.19 A W−1 were achieved. High-resolution imaging based on Te photodetectors was successfully obtained. All the results suggest that the chemical vapor deposition–grown low-dimensional Te is one of the competitive candidates for sensitive focal-plane-array infrared photodetectors at room temperature.

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“…A key feature of this virtual contact is that it offers an internal parallel path for the current, while also acts as a smart gate that modulates the potential distribution in the CNT channel. When compared with traditional HgCdTe or InSb multijunction cascade detectors, where series connection is made between physically separated regions with different chemical potentials such as heavily p‐ and n‐doped regions, the structure of CNT cascade detectors is much simpler. The virtual contact can be fabricated simply by connecting two different metals (with different work functions) together, no intentional chemical doping is required.…”

mentioning

confidence: 99%

“…On the other hand, in the open‐circuit mode, the current is practically zero, and the 1/ f noise is seen to have been effectively eliminated (see the black curve). Since the shot noise is proportional to the dark current, it is also effectively excluded at zero‐bias condition . The measured voltage noise spectrum is almost flat at zero bias, i.e., independent of the frequency, which is dominated by the Johnson noise.…”

mentioning

confidence: 99%

Room Temperature Broadband Infrared Carbon Nanotube Photodetector with High Detectivity and Stability

Yang

Wei

Zeng

et al. 2015

Advanced Optical Materials

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238 wileyonlinelibrary.com COMMUNICATION available highly purifi ed CNTs, with reported purity of up to 99.9% or even higher. [ 22 ] Another factor leads to the slow progress on the development of high-performance CNT IR detectors is that device structure and operation mode have not been optimized for solution-processed CNTs to achieve performance comparable with that of state-of-the-art commercial IR detectors. [ 23,24 ] In this letter, we show that high-performance photodiodes can be constructed using solution-processed CNTs via a dopingfree technique. In contrast to other photodetectors that use photocurrent as the signal, [ 8,[11][12][13][14][15][16][17][18][19][20] here we exploit using photovoltage as the signal. The major benefi t of using photovoltage is that the commonly occurring shot noise and 1/ f noise can be signifi cantly suppressed. In addition, signal can be multiplied via introducing virtual contacts, which leads to further improvement on signal-to-noise ratio. A prototype CNT IR detector is demonstrated, which works at room temperature and shows broadband response, high responsivity and detectivity that are comparable to that of state-of-the-art room temperature semiconductor IR detectors. It is also demonstrated that our CNT IR detectors have excellent stability, as a result of the dopingfabrication process used here, with time, under high power illumination and at rigorous temperature conditions. An array of 150 × 150 photodetectors on a single chip is fabricated, with tested yield of 100% and high device uniformity, showing the potential for large-scale fabrication capability and imager applications.In a typical photovoltaic device, a built-in fi eld is essential for the effi cient separation of photoinduced electron-hole pairs. For CNT-based diodes, ideal rectifi cation behavior has been realized by using split gates or asymmetric contacts on individual CNTs. [ 9,10,13 ] However, light absorption in these devices is usually very weak. It is thus advantageous to construct a photodiode using CNT fi lm with more CNTs in the device channel. However, solution-processed CNT-fi lm-based diodes showing excellent rectifi cation effect have not been realized. [ 23,24 ] Here, we show that such high-performance diode based on solutionprocessed CNT fi lm can be realized by using a doping-free technique in a barrier-free-bipolar diode (BFBD) device geometry as depicted in Figure 1 a. In this device geometry, Sc and Pd are asymmetrically contacted to a CNT fi lm made by a liquidphase deposition technique on an n + silicon/SiO 2 substrate (see Figure S1a,b, Supporting Information). Thus, p-region and n-region are automatically formed adjacent to the contacts by charge transfer from the contacts. This process involves no intentionally introduced dopants, no extra defects on CNTs,

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Miniaturized InSb photovoltaic infrared sensor operating at room temperature

Cited by 9 publications

References 4 publications

InSb Mid-Infrared Photon Detector for Room-Temperature Operation

InSb Mid-Infrared Photon Detector for Room-Temperature Operation

Blackbody-sensitive room-temperature infrared photodetectors based on low-dimensional tellurium grown by chemical vapor deposition

Room Temperature Broadband Infrared Carbon Nanotube Photodetector with High Detectivity and Stability

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