2019
DOI: 10.3390/app9071275
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Mitigating the Impact of Mask Absorber Error on Lithographic Performance by Lithography System Holistic Optimization

Abstract: The non-ideal mask absorber can cause an increase in critical dimension error (CDE) and decrease in process window (PW). However, the random mask absorber errors induced during mask fabricating and measuring are not considered in computational lithography. The problem cannot be neglected as the continuous scaling of lithography technology node. In this work, for the first time to our knowledge, a source, numerical aperture (NA), and process parameters co-optimization (SNPCO) method is developed to reduce the C… Show more

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Cited by 2 publications
(1 citation statement)
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“…Therefore, to tackle the focus variation, an analytical defocus expansion function was derived to predict the defocus aerial image in an inverse lithography technology (ILT) framework [10], so that a variational lithography model (VLIM) is derived to take into account exposure dose and focus variations [11]. Meanwhile, we previously proposed the source-mask-numerical aperture (NA) co-optimization (SMNO) method to extend the depth of defocus (DOF) by fine-tuning the NA [12,13], but it inevitably sacrificed resolution due to the reduction of NA. In addition, Peng et al [14] also studied SMO methods to improve the pattern fidelity in the case of an assigned defocus plane which operated at 100 nm defocusing, and our subsequent works have drawn on this approach [15,16], but it is hard to ensure global fidelity in different defocus variations.…”
Section: Introductionmentioning
confidence: 99%
“…Therefore, to tackle the focus variation, an analytical defocus expansion function was derived to predict the defocus aerial image in an inverse lithography technology (ILT) framework [10], so that a variational lithography model (VLIM) is derived to take into account exposure dose and focus variations [11]. Meanwhile, we previously proposed the source-mask-numerical aperture (NA) co-optimization (SMNO) method to extend the depth of defocus (DOF) by fine-tuning the NA [12,13], but it inevitably sacrificed resolution due to the reduction of NA. In addition, Peng et al [14] also studied SMO methods to improve the pattern fidelity in the case of an assigned defocus plane which operated at 100 nm defocusing, and our subsequent works have drawn on this approach [15,16], but it is hard to ensure global fidelity in different defocus variations.…”
Section: Introductionmentioning
confidence: 99%